P-type doping of gainnas quaternary alloys
文献类型：期刊论文
| 作者 | Shi, Hongliang1; Duan, Yifeng2 |
| 刊名 | Physics letters a
 |
| 出版日期 | 2008-12-22 |
| 卷号 | 373期号:1页码:165-168 |
| 关键词 | First-principles Alloy Doping Formation energy Transition energy Band offset |
| ISSN号 | 0375-9601 |
| DOI | 10.1016/j.physleta.2008.11.010 |
| 通讯作者 | Shi, hongliang(hlshi@semi.ac.cn) |
| 英文摘要 | Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random ga(1-x)in(x)n(1-y)as(y) quaternary alloys. we show that the mg(ga) substitution is a better choice than znga to realize the p-type doping because of the lower transition energy level and lower formation energy. the natural valence band alignment of gaas and gainnas alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (c) 2008 published by elsevier b.v. |
| WOS关键词 | SPECIAL QUASIRANDOM STRUCTURES ; SEMICONDUCTORS ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000261795700034 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427346 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, Hongliang |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221008, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, Hongliang,Duan, Yifeng. P-type doping of gainnas quaternary alloys[J]. Physics letters a,2008,373(1):165-168. |
| APA | Shi, Hongliang,&Duan, Yifeng.(2008).P-type doping of gainnas quaternary alloys.Physics letters a,373(1),165-168. |
| MLA | Shi, Hongliang,et al."P-type doping of gainnas quaternary alloys".Physics letters a 373.1(2008):165-168. |
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来源：半导体研究所
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