Experimental study on a diode-pumped passively mode-locking nd : gdvo4/sesam laser
文献类型：期刊论文
| 作者 | Shihua, L.1; Jie, L.1; Guanggang, W.1; Lei, L.1; Shushan, L.1; Min, L.1; Yonggang, W.2; Lianjie, Q.3 |
| 刊名 | Laser physics
 |
| 出版日期 | 2008-06-01 |
| 卷号 | 18期号:6页码:729-731 |
| ISSN号 | 1054-660X |
| DOI | 10.1134/s1054660x08060066 |
| 通讯作者 | Shihua, l.() |
| 英文摘要 | We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (cw) mode-locked nd:gdvo4 laser with a reflective semiconductor saturable absorber mirror (sesam). the threshold for the continuous wave was 0.36 w, and it is the lowest threshold for a continuous wave in a passively mode-locked nd:gdvo4 laser to our knowledge. the maximum average output power of 1.82 w was obtained at a pump power of 6.65 w with a slope efficiency of about 29%. the cw mode-locked pulse duration was measured to be about 10.5 ps with a 116-mhz repetition rate. |
| WOS关键词 | SATURABLE BRAGG REFLECTOR ; LOCKED ND-YVO4 LASER ; ABSORBER MIRROR ; SEMICONDUCTOR ABSORBER ; ND-GD0.5Y0.5VO4 LASER ; YLF LASERS ; POWER |
| WOS研究方向 | Optics ; Physics |
| WOS类目 | Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000256703000006 |
| 出版者 | MAIK NAUKA/INTERPERIODICA/SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427347 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shihua, L. |
| 作者单位 | 1.Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China 3.Yantai Univ, Coll Environm & Mat Engn, Yantai 264005, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shihua, L.,Jie, L.,Guanggang, W.,et al. Experimental study on a diode-pumped passively mode-locking nd : gdvo4/sesam laser[J]. Laser physics,2008,18(6):729-731. |
| APA | Shihua, L..,Jie, L..,Guanggang, W..,Lei, L..,Shushan, L..,...&Lianjie, Q..(2008).Experimental study on a diode-pumped passively mode-locking nd : gdvo4/sesam laser.Laser physics,18(6),729-731. |
| MLA | Shihua, L.,et al."Experimental study on a diode-pumped passively mode-locking nd : gdvo4/sesam laser".Laser physics 18.6(2008):729-731. |
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来源：半导体研究所
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