Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd
文献类型：期刊论文
| 作者 | Luo, Weijun; Wang, Xiaoliang; Guo, Lunchun; Mao, Hongling; Wang, Cuimei; Ran, Junxue; Li, Jianping; Li, Jinmin |
| 刊名 | Microelectronics journal
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 39期号:12页码:1710-1713 |
| 关键词 | Gan Si(111) Crack Aln Mocvd |
| ISSN号 | 0026-2692 |
| DOI | 10.1016/j.mejo.2008.01.042 |
| 通讯作者 | Luo, weijun(luoweijun@mail.semi.ac.cn) |
| 英文摘要 | The effect of thickness of the high-temperature (ht) aln buffer layer on the properties of gan grown on si(111) has been investigated. optical microscopy (om), atomic force microscopy (afm) and x-ray diffraction (xrd) are employed to characterize these samples grown by metal-organic chemical vapor deposition (mocvd). the results demonstrate that the morphology and crystalline properties of the gan epilayer strongly depend on the thickness of ht aln buffer layer, and the optimized thickness of the ht aln buffer layer is about 110 nm. together with the low-temperature (lt) aln interlayer, high-quality gan epilayer with low crack density can be obtained. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; CRACK-FREE GAN ; MOVPE GROWTH ; SI ; SUBSTRATE ; STRESS ; FILMS |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
| 语种 | 英语 |
| WOS记录号 | WOS:000261647800060 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427355 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, Weijun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, Weijun,Wang, Xiaoliang,Guo, Lunchun,et al. Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd[J]. Microelectronics journal,2008,39(12):1710-1713. |
| APA | Luo, Weijun.,Wang, Xiaoliang.,Guo, Lunchun.,Mao, Hongling.,Wang, Cuimei.,...&Li, Jinmin.(2008).Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd.Microelectronics journal,39(12),1710-1713. |
| MLA | Luo, Weijun,et al."Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd".Microelectronics journal 39.12(2008):1710-1713. |
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来源：半导体研究所
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