Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures
文献类型：期刊论文
| 作者 | Yang, Tao1; Nishioka, Masao2; Arakawa, Yasuhiko2 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 310期号:24页码:5469-5472 |
| 关键词 | Metalorganic chemical vapor deposition Quantum dots Inas Gaas Laser diodes |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2008.09.173 |
| 通讯作者 | Yang, tao(tyang@semi.ac.cn) |
| 英文摘要 | We report on optimizing the gaas capping layer growth of 1.3 mu m inas quantum dots (qds) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. the initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees c, which is the same for the growth of both the qds and a 5-nm-thick in(0.15)ga(0.85)as strain-reducing capping layer on the qds, while the remaining part is grown at a higher temperature of 560 degrees c after a rapid temperature rise and subsequent annealing period at this temperature. the capping layer is deposited at the low temperatures (<= 560 degrees c) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the qds. we demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the qds. this significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. the technique reported here has important implications for realizing stacked 1.3 mu m inas/gaas qd lasers. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; SPACER LAYER ; LASERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000262193900040 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427358 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Tao |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan |
| 推荐引用方式 GB/T 7714 | Yang, Tao,Nishioka, Masao,Arakawa, Yasuhiko. Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures[J]. Journal of crystal growth,2008,310(24):5469-5472. |
| APA | Yang, Tao,Nishioka, Masao,&Arakawa, Yasuhiko.(2008).Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures.Journal of crystal growth,310(24),5469-5472. |
| MLA | Yang, Tao,et al."Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures".Journal of crystal growth 310.24(2008):5469-5472. |
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来源：半导体研究所
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