Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers
文献类型：期刊论文
| 作者 | Xiao, Jin-Long; Huang, Yong-Zhen |
| 刊名 | Ieee journal of quantum electronics
 |
| 出版日期 | 2008-05-01 |
| 卷号 | 44期号:5-6页码:448-455 |
| 关键词 | Gain Noise Quantum dots (qds) Semiconductor-optical amplifiers (soas) |
| ISSN号 | 0018-9197 |
| DOI | 10.1109/jqe.2007.916683 |
| 通讯作者 | Xiao, jin-long(jlxiao@semi.ac.cn) |
| 英文摘要 | The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (qd-soas). the carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. the longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. the saturation output power 19.7 dbm and device gain 20.6 db are obtained for a qd-soa with the cavity length of 6 rum at the bias current of 500 ma. the influences of them electron intradot relaxation time and the qd capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. the noise figure as low as 3.5 db is expected due to the strong polarization sensitive spontaneous emission. the characteristics of gain saturation and noise figure versus input signal power for qd-soas are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields. |
| WOS关键词 | LINEWIDTH ENHANCEMENT FACTOR ; INTRABAND RELAXATION ; EXCITED-STATES ; OUTPUT POWER ; MU-M ; DYNAMICS ; LASERS ; MODEL ; SIMULATION ; EMISSION |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000256701500006 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427360 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xiao, Jin-Long |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, Jin-Long,Huang, Yong-Zhen. Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers[J]. Ieee journal of quantum electronics,2008,44(5-6):448-455. |
| APA | Xiao, Jin-Long,&Huang, Yong-Zhen.(2008).Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers.Ieee journal of quantum electronics,44(5-6),448-455. |
| MLA | Xiao, Jin-Long,et al."Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers".Ieee journal of quantum electronics 44.5-6(2008):448-455. |
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来源：半导体研究所
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