Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)]
文献类型：期刊论文
| 作者 | Zhou, Zhiwen1; Li, Cheng1; Chen, Songyan1; Lai, Hongkai1; Yu, Jinzhong2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-10-13 |
| 卷号 | 93期号:15页码:2 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3003873 |
| 通讯作者 | Zhou, zhiwen(xmuzhouzw@yahoo.com.cn) |
| 英文摘要 | In a recent letter, hsieh reported the growth of high-quality ge epilayers with a sige buffer thickness of only 0.45 mu m, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6 x 10(6) cm(-2) on si(+) pre-ion-implantation si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. our comment has focused on x-ray diffraction data shown in fig. 3 of ref. 1. we demonstrate that the strain in ge epilayers is tensile, rather than compressive as misunderstood by the authors. (c) 2008 american institute of physics. [doi: 10.1063/1.3003873] |
| WOS关键词 | THERMAL-EXPANSION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000260125100111 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427361 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, Zhiwen |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Zhiwen,Li, Cheng,Chen, Songyan,et al. Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)][J]. Applied physics letters,2008,93(15):2. |
| APA | Zhou, Zhiwen,Li, Cheng,Chen, Songyan,Lai, Hongkai,&Yu, Jinzhong.(2008).Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)].Applied physics letters,93(15),2. |
| MLA | Zhou, Zhiwen,et al."Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)]".Applied physics letters 93.15(2008):2. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。