Enhancement effect of plasma-enhanced chemical-vapor-deposited sin capping layer on dielectric cap quantum-well disordering
文献类型：期刊论文
| 作者 | CHOI, WJ; LEE, S; ZHANG, JM; KIM, Y; KIM, SK; LEE, JI; KANG, KN; CHO, K |
| 刊名 | Japanese journal of applied physics part 2-letters & express letters
 |
| 出版日期 | 1995-04-01 |
| 卷号 | 34期号:4a页码:L418-l421 |
| 关键词 | Dielectric cap quantum well disordering Gaas/algaas multiple quantum well Silicon nitride Pecvd Vacancy diffusion |
| ISSN号 | 0021-4922 |
| 通讯作者 | Choi, wj() |
| 英文摘要 | Quantum well disordering of gaas/algaas multiple quantum well(mqw) has been accomplished with only plasma enhanced chemical vapor deposited (pecvd) sin cap layer growth. the amount of blue shift increases with sin growing time. this result has been explained by the vacancy indiffusion during pecvd sin growth. rapid thermal annealing (rta) of the sample after sin cap layer growth at 850 degrees c for 35 s caused a larger amount of blue shift than those obtained without rta. by considering the model of al diffusion from algaas barrier into gaas qws together with the result from photoluminescence (pl) measurement, al diffusion coefficients were calculated. the al diffusion coefficient due to pecvd sin was estimated at about 3 x10(-17) cm(2)/s. it was possible to extract the effect of rta on the qw disordering, which showed that the amount of the blue shift and the al diffusion coefficient due only to rta increases with sin cap layer thickness as reported by chi et al.(10)) |
| WOS关键词 | OUT-DIFFUSION ; WAVE-GUIDE ; LASERS ; GAAS ; FILMS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:A1995RD78400007 |
| 出版者 | JAPAN SOC APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427377 |
| 专题 | 半导体研究所 |
| 通讯作者 | CHOI, WJ |
| 作者单位 | 1.CHINESE ACAD SCI, INST SEMICOND, BEIJING 100083, PEOPLES R CHINA 2.SOGANG UNIV, DEPT PHYS, SEOUL 100611, SOUTH KOREA |
| 推荐引用方式 GB/T 7714 | CHOI, WJ,LEE, S,ZHANG, JM,et al. Enhancement effect of plasma-enhanced chemical-vapor-deposited sin capping layer on dielectric cap quantum-well disordering[J]. Japanese journal of applied physics part 2-letters & express letters,1995,34(4a):L418-l421. |
| APA | CHOI, WJ.,LEE, S.,ZHANG, JM.,KIM, Y.,KIM, SK.,...&CHO, K.(1995).Enhancement effect of plasma-enhanced chemical-vapor-deposited sin capping layer on dielectric cap quantum-well disordering.Japanese journal of applied physics part 2-letters & express letters,34(4a),L418-l421. |
| MLA | CHOI, WJ,et al."Enhancement effect of plasma-enhanced chemical-vapor-deposited sin capping layer on dielectric cap quantum-well disordering".Japanese journal of applied physics part 2-letters & express letters 34.4a(1995):L418-l421. |
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来源：半导体研究所
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