Optical study of lateral carrier transfer in (in,ga)as/gaas quantum-dot chains
文献类型：期刊论文
| 作者 | Wang, B. R.1; Sun, B. Q.1; Ji, Y.1; Dou, X. M.1; Xu, Z. Y.1; Wang, Zh. M.2; Salamo, G. J.2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-07-07 |
| 卷号 | 93期号:1页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2957466 |
| 通讯作者 | Wang, b. r.(brwang04@semi.ac.cn) |
| 英文摘要 | We have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (pl) and polarization pl. the pl decay time increases with temperature, following the t(1/2) law for the typical one-dimensional quantum system. the decay time depends strongly on the emission energy: it decreases as the photon energy increases. moreover, a strong polarization anisotropy is observed. these results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 american institute of physics. |
| WOS关键词 | LOCALIZED STATES ; ISLANDS ; WIRES ; SUPERLATTICES ; ORGANIZATION ; GAAS(100) ; EXCITONS ; GROWTH ; DECAY ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000258184600007 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427379 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, B. R. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA |
| 推荐引用方式 GB/T 7714 | Wang, B. R.,Sun, B. Q.,Ji, Y.,et al. Optical study of lateral carrier transfer in (in,ga)as/gaas quantum-dot chains[J]. Applied physics letters,2008,93(1):3. |
| APA | Wang, B. R..,Sun, B. Q..,Ji, Y..,Dou, X. M..,Xu, Z. Y..,...&Salamo, G. J..(2008).Optical study of lateral carrier transfer in (in,ga)as/gaas quantum-dot chains.Applied physics letters,93(1),3. |
| MLA | Wang, B. R.,et al."Optical study of lateral carrier transfer in (in,ga)as/gaas quantum-dot chains".Applied physics letters 93.1(2008):3. |
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来源：半导体研究所
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