Structural, electrical, and optical properties of inas(x)sb(1-x) epitaxial films grown by liquid-phase epitaxy
文献类型：期刊论文
| 作者 | Gao, Fubao1; Chen, Nuofu1,2; Zhang, X. W.1; Wang, Yu1; Liu, Lei1; Yin, Zhigang1; Wu, Jinliang1 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2008-10-01 |
| 卷号 | 104期号:7页码:5 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2989116 |
| 通讯作者 | Gao, fubao(fbgao@semi.ac.cn) |
| 英文摘要 | The inas(x)sb(1-x) films were grown on (100) gasb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. the high-resolution x-ray diffraction results reveal that the single crystalline inas(x)sb(1-x) films with a midrange composition are epitaxially grown on the gasb substrates. temperature dependence of the hall mobility was theoretically modeled by considering several predominant scattering mechanisms. the results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (rt). furthermore, the inas(x)sb(1-x) films with the higher as composition exhibit the better crystalline quality and the higher mobility. the inas(0.35)sb(0.65) film exhibits a hall mobility of 4.62x10(4) cm(2) v(-1) s(-1). the cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 v/w at rt, showing great potential for rt long-wavelength infrared detection. (c) 2008 american institute of physics. [doi: 10.1063/1.2989116] |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; X-RAY-DIFFRACTION ; TRANSPORT-PROPERTIES ; BUFFER LAYERS ; INAS1-XSBX ; ALLOYS ; INASSB ; GAAS ; INSB |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000260125500074 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427381 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, Fubao |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Fubao,Chen, Nuofu,Zhang, X. W.,et al. Structural, electrical, and optical properties of inas(x)sb(1-x) epitaxial films grown by liquid-phase epitaxy[J]. Journal of applied physics,2008,104(7):5. |
| APA | Gao, Fubao.,Chen, Nuofu.,Zhang, X. W..,Wang, Yu.,Liu, Lei.,...&Wu, Jinliang.(2008).Structural, electrical, and optical properties of inas(x)sb(1-x) epitaxial films grown by liquid-phase epitaxy.Journal of applied physics,104(7),5. |
| MLA | Gao, Fubao,et al."Structural, electrical, and optical properties of inas(x)sb(1-x) epitaxial films grown by liquid-phase epitaxy".Journal of applied physics 104.7(2008):5. |
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来源：半导体研究所
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