Valence band offset of inn/4h-sic heterojunction measured by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Zhang, B. L.1; Sun, G. S.2; Guo, Y.1; Zhang, P. F.1; Zhang, R. Q.1; Fan, H. B.1; Liu, X. L.1; Yang, S. Y.1; Zhu, Q. S.1; Wang, Z. G.1 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-12-15 |
| 卷号 | 93期号:24页码:3 |
| ISSN号 | 0003-6951 |
| 关键词 | Conduction bands Iii-v semiconductors Indium compounds Interface states Semiconductor heterojunctions Silicon compounds Valence bands Wide band gap semiconductors X-ray photoelectron spectra |
| DOI | 10.1063/1.3046116 |
| 通讯作者 | Zhang, b. l.(zhangbaoli@semi.ac.cn) |
| 英文摘要 | The valence band offset (vbo) of inn/4h-sic heterojunction has been directly measured by x-ray photoelectron spectroscopy. the vbo is determined to be 0.55 +/- 0.23 ev and the conduction band offset is deduced to be -2.01 +/- 0.23 ev, indicating that the heterojunction has a type-i band alignment. the accurate determination of the valence and conduction band offsets is important for applications of inn/sic optoelectronic devices. |
| WOS关键词 | MOVPE INN ; 3C-SIC/SI(111) ; SEMICONDUCTOR ; EPITAXY ; ALN ; GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000261896400036 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427382 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, B. L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, B. L.,Sun, G. S.,Guo, Y.,et al. Valence band offset of inn/4h-sic heterojunction measured by x-ray photoelectron spectroscopy[J]. Applied physics letters,2008,93(24):3. |
| APA | Zhang, B. L..,Sun, G. S..,Guo, Y..,Zhang, P. F..,Zhang, R. Q..,...&Wang, Z. G..(2008).Valence band offset of inn/4h-sic heterojunction measured by x-ray photoelectron spectroscopy.Applied physics letters,93(24),3. |
| MLA | Zhang, B. L.,et al."Valence band offset of inn/4h-sic heterojunction measured by x-ray photoelectron spectroscopy".Applied physics letters 93.24(2008):3. |
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来源：半导体研究所
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