The influence of low-temperature ge seed layer on growth of high-quality ge epilayer on si(100) by ultrahigh vacuum chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhou, Zhiwen1; Li, Cheng1; Lai, Hongkai1; Chen, Songyan1; Yu, Jinzhong2 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2008-05-01 |
| 卷号 | 310期号:10页码:2508-2513 |
| 关键词 | Characterization Reflection high energy electron diffraction X-ray diffraction Chemical vapor deposition Germanium |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2008.01.016 |
| 通讯作者 | Li, cheng(lich@xmu.edu.cn) |
| 英文摘要 | High-quality ge epilayer on si(1 0 0) substrate with an inserted low-temperature ge seed layer and a thin si0.77ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. the epitaxial ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. the influence of low temperature ge seed layer on the quality of ge epilayer was investigated. we demonstrated that the relatively higher temperature (350 degrees c) for the growth of ge seed layer significantly improved the crystal quality and the hall hole mobility of the ge epilayer. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | THREADING-DISLOCATION DENSITIES ; MOLECULAR-BEAM EPITAXY ; SI ; RELAXATION ; SI(001) ; FILMS ; SURFACTANT ; BARRIER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000256237400015 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427383 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Cheng |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Zhiwen,Li, Cheng,Lai, Hongkai,et al. The influence of low-temperature ge seed layer on growth of high-quality ge epilayer on si(100) by ultrahigh vacuum chemical vapor deposition[J]. Journal of crystal growth,2008,310(10):2508-2513. |
| APA | Zhou, Zhiwen,Li, Cheng,Lai, Hongkai,Chen, Songyan,&Yu, Jinzhong.(2008).The influence of low-temperature ge seed layer on growth of high-quality ge epilayer on si(100) by ultrahigh vacuum chemical vapor deposition.Journal of crystal growth,310(10),2508-2513. |
| MLA | Zhou, Zhiwen,et al."The influence of low-temperature ge seed layer on growth of high-quality ge epilayer on si(100) by ultrahigh vacuum chemical vapor deposition".Journal of crystal growth 310.10(2008):2508-2513. |
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来源：半导体研究所
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