Growth of gan nanorods prepared by ammoniating ga203/zno films on si substrates and their properties: structure, morphology, chemical state and photo luminescence
文献类型：期刊论文
| 作者 | Zhuang, Huizhao1; Xue, Shoubin2; Zhang, Shiying1; Hu, Lijun1; Li, Baoli1; Xue, Chengshan1 |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2008-02-01 |
| 卷号 | 40期号:4页码:828-832 |
| 关键词 | Gan nanorods Ga2o3 films Ammoniating technique |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2007.10-074 |
| 通讯作者 | Zhuang, huizhao(zhuanghuizhao@sdnu.edu.cn) |
| 英文摘要 | Large quantities of gan nanorods have been successfully synthesized on si(1 1 1) substrates by magnetron sputtering through ammoniating the ga2o3/zno films at 950 degrees c in a quartz tube. the gan nanorods are characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), a field-emission transmission electron microscope (fetem), a fourier transform infrared (ftir) spectrophotometer and a fluorescence spectrophotometer. the results show that the nanorods have pure hexagonal gan wurtzite structure, with lengths of about several micrometers and diameters of about 200nm. the clear lattice fringes demonstrate that the synthesized nanorods are single-crystal gan. the ftir spectrum further confirms that the gan is obtained under this condition. the representative photoluminescence spectrum at room temperature exhibited a strong emission peak at 375.7 nm and two weak emission peaks at 436.2 and 475.5 nm. the gan nanorods show a very good emission property, which will have a good advantage for applications in laser device using one-dimensional structures. finally, the growth mechanism is also briefly discussed. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | GALLIUM NITRIDE NANOWIRES ; VAPOR-DEPOSITION ; EXCESS CARBON ; ZNO FILMS ; TEMPERATURE ; ABSORPTION |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000254371200017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427384 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, Huizhao |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Peking Univ, Inst Microelect, SOI Grp, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang, Huizhao,Xue, Shoubin,Zhang, Shiying,et al. Growth of gan nanorods prepared by ammoniating ga203/zno films on si substrates and their properties: structure, morphology, chemical state and photo luminescence[J]. Physica e-low-dimensional systems & nanostructures,2008,40(4):828-832. |
| APA | Zhuang, Huizhao,Xue, Shoubin,Zhang, Shiying,Hu, Lijun,Li, Baoli,&Xue, Chengshan.(2008).Growth of gan nanorods prepared by ammoniating ga203/zno films on si substrates and their properties: structure, morphology, chemical state and photo luminescence.Physica e-low-dimensional systems & nanostructures,40(4),828-832. |
| MLA | Zhuang, Huizhao,et al."Growth of gan nanorods prepared by ammoniating ga203/zno films on si substrates and their properties: structure, morphology, chemical state and photo luminescence".Physica e-low-dimensional systems & nanostructures 40.4(2008):828-832. |
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来源：半导体研究所
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