Synthesis of gan nanorods by ammoniating ga(2)o(3) films on in(2)o(3) layer deposited on si (111) substrates
文献类型：期刊论文
| 作者 | Wang, Fuxue; Xue, Chengshan; Yang, Zhaozhu |
| 刊名 | Materials letters
 |
| 出版日期 | 2008-06-15 |
| 卷号 | 62期号:16页码:2318-2320 |
| 关键词 | Nanorods In(2)o(3) Magnetron sputtering Gan |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2007.11.079 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Gan nanorods were synthesized by ammoniating ga(2)o(3)/in(2)o(3) thin films deposited on si (111) with magnetron sputtering. x-ray diffraction, scanning electronic microscope and high-resolution tem results show that they are gan single crystals, the sizes of which vary from 2 to 7 mu m in length and 200 to 300 nm in diameter. in(2)o(3) middle layer plays an important role in the gan nanorod growth. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | THIN-FILMS ; NANOWIRES ; SI(111) ; GROWTH ; CARBON |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000256159300031 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427386 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Funct Mat Lab, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Fuxue,Xue, Chengshan,Yang, Zhaozhu. Synthesis of gan nanorods by ammoniating ga(2)o(3) films on in(2)o(3) layer deposited on si (111) substrates[J]. Materials letters,2008,62(16):2318-2320. |
| APA | Wang, Fuxue,Xue, Chengshan,&Yang, Zhaozhu.(2008).Synthesis of gan nanorods by ammoniating ga(2)o(3) films on in(2)o(3) layer deposited on si (111) substrates.Materials letters,62(16),2318-2320. |
| MLA | Wang, Fuxue,et al."Synthesis of gan nanorods by ammoniating ga(2)o(3) films on in(2)o(3) layer deposited on si (111) substrates".Materials letters 62.16(2008):2318-2320. |
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来源：半导体研究所
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