Voltage tunable two-color inas/gaas quantum dot infrared photodetector
文献类型：期刊论文
| 作者 | Ma, W. Q.1; Yang, X. J.1; Chong, M.1; Yang, T.1; Chen, L. H.1; Shao, J.2; Lue, X.2; Lu, W.2; Song, C. Y.3; Uo, H. C.3 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-07-07 |
| 卷号 | 93期号:1页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2956672 |
| 通讯作者 | Ma, w. q.(wqma@semi.ac.cn) |
| 英文摘要 | We report a bias voltage tunable two-color inas/gaas quantum dot infrared photodetector working under the normal incidence infared irradiation. the two-color detection of our device is realized by combining a photovoltaic and a photoconductive response by bias voltage tuning. the photovoltaic response is attributed to the transition of electron from the ground state to a high continuum state. the photoconductive response arises from the transition of electron from the ground state to the wetting layer state through the barrier via fowler-nordheim tunneling evidenced by a broad feature of the photocurrent peak on the high energy side. (c) 2008 american institute of physics. |
| WOS关键词 | DETECTOR |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000258184600064 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427387 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ma, W. Q. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada |
| 推荐引用方式 GB/T 7714 | Ma, W. Q.,Yang, X. J.,Chong, M.,et al. Voltage tunable two-color inas/gaas quantum dot infrared photodetector[J]. Applied physics letters,2008,93(1):3. |
| APA | Ma, W. Q..,Yang, X. J..,Chong, M..,Yang, T..,Chen, L. H..,...&Uo, H. C..(2008).Voltage tunable two-color inas/gaas quantum dot infrared photodetector.Applied physics letters,93(1),3. |
| MLA | Ma, W. Q.,et al."Voltage tunable two-color inas/gaas quantum dot infrared photodetector".Applied physics letters 93.1(2008):3. |
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来源：半导体研究所
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