Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching
文献类型：期刊论文
| 作者 | Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Guohong |
| 刊名 | Solid-state electronics
 |
| 出版日期 | 2008-06-01 |
| 卷号 | 52期号:6页码:962-967 |
| 关键词 | Ingan/gan multiple quantum wells Light-emitting diode Wet etching Inductively coupled plasma etching |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2007.12.013 |
| 通讯作者 | Gao, haiyong(hygao@semi.ac.cn) |
| 英文摘要 | Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (icp) etching technique was proposed to improve the performance of gan-based light-emitting diodes (leds). gan-based leds were fabricated on sapphire substrates through metal organic chemical vapor deposition (mocvd). the leds fabricated on the patterned substrates exhibit improved device performance compared with the conventional led fabricated on planar substrates when growth and device fabricating conditions were the same. the light output powers of the leds fabricated on wet-patterned and icp-patterned substrates were about 37% and 17% higher than that of leds on planar substrates at an injection current of 20 ma, respectively. the enhancement is attributable to the combination of the improvement of gan-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; VAPOR-PHASE EPITAXY ; EFFICIENCY ; FABRICATION |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000256845800022 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427394 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, Haiyong |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Haiyong,Yan, Fawang,Zhang, Yang,et al. Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching[J]. Solid-state electronics,2008,52(6):962-967. |
| APA | Gao, Haiyong,Yan, Fawang,Zhang, Yang,Li, Jinmin,Zeng, Yiping,&Wang, Guohong.(2008).Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching.Solid-state electronics,52(6),962-967. |
| MLA | Gao, Haiyong,et al."Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching".Solid-state electronics 52.6(2008):962-967. |
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来源：半导体研究所
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