Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao Hong-Ling1; Zeng Yi-Peng1; Wang Bao-Qiang1; Zhu Zhan-Ping1; Wang Zhan-Guo2 |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2008-03-01 |
| 卷号 | 17期号:3页码:1119-1123 |
| 关键词 | Molecular beam epitaxy Semiconducting iii-v materials High electron mobility transistors |
| ISSN号 | 1674-1056 |
| 通讯作者 | Gao hong-ling(hlgao@semi.ac.cn) |
| 英文摘要 | A series of metamorphic high electron mobility transistors (mmhemts) with different v/iii flux ratios are grown on gaas (001) substrates by molecular beam epitaxy (xibe). the samples are analysed by using atomic force microscopy (afm), hall measurement, and low temperature photoluminescence (pl). the optimum v/iii ratio in a range from 15 to 60 for the growth of mmhemts is found to be around 40. at this ratio, the root mean square (rms) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(v.s) and 3.26 x 10(12)cm(-2) respectively. these results are equivalent to those obtained for the same structure grown on inp substrate. there are two peaks in the pl spectrum of the structure, corresponding to two sub-energy levels of the in0.53ga0.47 as quantum well. it is found that the photoluminescence intensities of the two peaks vary with the v/iii ratio, for which the reasons are discussed. |
| WOS关键词 | INALAS/INGAAS/INP HEMTS ; LOW-TEMPERATURE ; GAAS SUBSTRATE ; SURFACE ; GAS ; LENGTH ; WELLS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000254288400061 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427395 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao Hong-Ling |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao Hong-Ling,Zeng Yi-Peng,Wang Bao-Qiang,et al. Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy[J]. Chinese physics b,2008,17(3):1119-1123. |
| APA | Gao Hong-Ling,Zeng Yi-Peng,Wang Bao-Qiang,Zhu Zhan-Ping,&Wang Zhan-Guo.(2008).Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy.Chinese physics b,17(3),1119-1123. |
| MLA | Gao Hong-Ling,et al."Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy".Chinese physics b 17.3(2008):1119-1123. |
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来源：半导体研究所
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