Influence of different interlayers on growth mode and properties of inn by movpe
文献类型：期刊论文
| 作者 | Zhang Ri-Qing; Liu Xiang-Lin; Kang Ting-Ting; Hu Wei-Guo; Yang Shao-Yan; Jiao Chun-Mei; Zhu Qing-Sheng |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:1页码:238-241 |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhang ri-qing(zhangriq@semi.ac.cn) |
| 英文摘要 | We grow inn epilayers on different interlayers by metal organic vapour phase epitaxy (movpe) method, and investigate the effect of interlayer on the properties and growth mode of inn films. three inn samples were deposited on nitrided sapphire, low-temperature inn (lt-inn) and high-temperature gan (ht-gan), respectively. the inn layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (xrc) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2d) step-flow-like lateral growth mode, which is much different from the three-dimensional (3d) pillar-like growth mode of lt-inn and ht-gan buffered samples. it seems that mismatch tensile strain is helpful for the lateral epitaxy of inn film, whereas compressive strain promotes the vertical growth of inn films. |
| WOS关键词 | DEFECT STRUCTURE ; EPITAXIAL GAN ; BAND-GAP |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000252613500065 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427401 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang Ri-Qing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Ri-Qing,Liu Xiang-Lin,Kang Ting-Ting,et al. Influence of different interlayers on growth mode and properties of inn by movpe[J]. Chinese physics letters,2008,25(1):238-241. |
| APA | Zhang Ri-Qing.,Liu Xiang-Lin.,Kang Ting-Ting.,Hu Wei-Guo.,Yang Shao-Yan.,...&Zhu Qing-Sheng.(2008).Influence of different interlayers on growth mode and properties of inn by movpe.Chinese physics letters,25(1),238-241. |
| MLA | Zhang Ri-Qing,et al."Influence of different interlayers on growth mode and properties of inn by movpe".Chinese physics letters 25.1(2008):238-241. |
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来源：半导体研究所
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