Effect of nitridation on morphology, structural properties and stress of ain films
文献类型：期刊论文
| 作者 | Hu Wei-Guo; Jiao Chun-Mei; Wei Hong-Yuan; Zhang Pan-Feng; Kang Ting-Ting; Zhang Ri-Qing; Liu Xiang-Lin |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 25期号:12页码:4364-4367 |
| ISSN号 | 0256-307X |
| 通讯作者 | Hu wei-guo(sivamay@semi.ac.cn) |
| 英文摘要 | We investigate effects of nitridation on ain morphology, structural properties and stress. it is found that 3 min nitridation can prominently improve ain crystal structure, and slightly smooth the surface morphology. however, 10 min nitridation degrades out-of-plane crystal structure and surface morphology instead. additionally, 3-min nitridation introduces more tensile stress (1.5 gpa) in ain films, which can be attributed to the weaker islands 2d coalescent. nitridation for 10 min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. thus, the stress in ain with 10 min nitridation decreases to -0.2 gpa compressive stress. |
| WOS关键词 | TRANSMISSION ELECTRON-MICROSCOPY ; WURTZITE-TYPE CRYSTALS ; VAPOR-PHASE EPITAXY ; INTRINSIC STRESS ; SAPPHIRE SURFACE ; THIN-FILMS ; GAN ; GROWTH ; DIFFRACTION ; MECHANISM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000261772100050 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427406 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hu Wei-Guo |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu Wei-Guo,Jiao Chun-Mei,Wei Hong-Yuan,et al. Effect of nitridation on morphology, structural properties and stress of ain films[J]. Chinese physics letters,2008,25(12):4364-4367. |
| APA | Hu Wei-Guo.,Jiao Chun-Mei.,Wei Hong-Yuan.,Zhang Pan-Feng.,Kang Ting-Ting.,...&Liu Xiang-Lin.(2008).Effect of nitridation on morphology, structural properties and stress of ain films.Chinese physics letters,25(12),4364-4367. |
| MLA | Hu Wei-Guo,et al."Effect of nitridation on morphology, structural properties and stress of ain films".Chinese physics letters 25.12(2008):4364-4367. |
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来源：半导体研究所
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