Effect of ammoniating temperature on structural and morphologic properties of nanostructured gan
文献类型：期刊论文
| 作者 | Zhuang, Huizhao; Zhang, Shiying; Xue, Chengshan; Li, Baoli; Shen, Jiabing; Wang, Dexiao |
| 刊名 | Microelectronics journal
 |
| 出版日期 | 2008-05-01 |
| 卷号 | 39期号:5页码:807-811 |
| 关键词 | Gan nanomaterials Magnetron sputtering Ammoniating |
| ISSN号 | 0026-2692 |
| DOI | 10.1016/j.mejo.2007.12.003 |
| 通讯作者 | Zhuang, huizhao(zhuanghuizhao@sdnu.edu.cn) |
| 英文摘要 | Nanostructured gan was synthesized by ammoniating ga(2)o(3)/mo films at different temperatures in a quartz tube. the as-synthesized gan was studied by x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscopy (hrtem) and fourier transform infrared (ftir) spectroscopy. the results show that the nanostructured material is single-crystal gan with hexagonal wurtzite structure. the ammoniating temperature of the samples has an evident effect on the morphology and structure of the nanostructured gan synthesized by this method. lower temperature promotes the growth of wire-like structures and higher temperature facilitates the formation of the sheet-like structure. the growth mechanism of the nanostructured gan was also discussed. (c) 2007 elsevier ltd. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; LARGE-SCALE ; NANOWIRES ; FILMS ; NANORODS ; SI(111) ; GROWTH ; CARBON ; NH3 |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
| 语种 | 英语 |
| WOS记录号 | WOS:000256610900021 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427409 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, Huizhao |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang, Huizhao,Zhang, Shiying,Xue, Chengshan,et al. Effect of ammoniating temperature on structural and morphologic properties of nanostructured gan[J]. Microelectronics journal,2008,39(5):807-811. |
| APA | Zhuang, Huizhao,Zhang, Shiying,Xue, Chengshan,Li, Baoli,Shen, Jiabing,&Wang, Dexiao.(2008).Effect of ammoniating temperature on structural and morphologic properties of nanostructured gan.Microelectronics journal,39(5),807-811. |
| MLA | Zhuang, Huizhao,et al."Effect of ammoniating temperature on structural and morphologic properties of nanostructured gan".Microelectronics journal 39.5(2008):807-811. |
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来源：半导体研究所
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