Structure and magnetic characteristics of nonpolar a-plane gan : mn films
文献类型:期刊论文
作者 | Sun, Lili; Yan, Fawang; Gao, Haiyong; Zhang, Huixiao; Zeng, Yiping; Wang, Guohong; Li, Jinmin |
刊名 | Journal of physics d-applied physics
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出版日期 | 2008-08-21 |
卷号 | 41期号:16页码:3 |
ISSN号 | 0022-3727 |
DOI | 10.1088/0022-3727/41/16/165004 |
通讯作者 | Sun, lili(lilisun@semi.ac.cn) |
英文摘要 | Diluted magnetic nonpolar gan:mn films have been fabricated by implanting mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) gan films with a subsequent rapid thermal annealing (rta) process. the structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (xrd), atomic force microscopy (afm) and a superconducting quantum interference device (squid), respectively. the xrd analysis shows that the rta process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. the squid result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature. |
WOS关键词 | P-TYPE GAN ; SAPPHIRE ; PROPERTY |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000258221100027 |
出版者 | IOP PUBLISHING LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427412 |
专题 | 半导体研究所 |
通讯作者 | Sun, Lili |
作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Sun, Lili,Yan, Fawang,Gao, Haiyong,et al. Structure and magnetic characteristics of nonpolar a-plane gan : mn films[J]. Journal of physics d-applied physics,2008,41(16):3. |
APA | Sun, Lili.,Yan, Fawang.,Gao, Haiyong.,Zhang, Huixiao.,Zeng, Yiping.,...&Li, Jinmin.(2008).Structure and magnetic characteristics of nonpolar a-plane gan : mn films.Journal of physics d-applied physics,41(16),3. |
MLA | Sun, Lili,et al."Structure and magnetic characteristics of nonpolar a-plane gan : mn films".Journal of physics d-applied physics 41.16(2008):3. |
入库方式: iSwitch采集
来源:半导体研究所
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