中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structure and magnetic characteristics of nonpolar a-plane gan : mn films

文献类型:期刊论文

作者Sun, Lili; Yan, Fawang; Gao, Haiyong; Zhang, Huixiao; Zeng, Yiping; Wang, Guohong; Li, Jinmin
刊名Journal of physics d-applied physics
出版日期2008-08-21
卷号41期号:16页码:3
ISSN号0022-3727
DOI10.1088/0022-3727/41/16/165004
通讯作者Sun, lili(lilisun@semi.ac.cn)
英文摘要Diluted magnetic nonpolar gan:mn films have been fabricated by implanting mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) gan films with a subsequent rapid thermal annealing (rta) process. the structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (xrd), atomic force microscopy (afm) and a superconducting quantum interference device (squid), respectively. the xrd analysis shows that the rta process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. the squid result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.
WOS关键词P-TYPE GAN ; SAPPHIRE ; PROPERTY
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000258221100027
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427412
专题半导体研究所
通讯作者Sun, Lili
作者单位Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Sun, Lili,Yan, Fawang,Gao, Haiyong,et al. Structure and magnetic characteristics of nonpolar a-plane gan : mn films[J]. Journal of physics d-applied physics,2008,41(16):3.
APA Sun, Lili.,Yan, Fawang.,Gao, Haiyong.,Zhang, Huixiao.,Zeng, Yiping.,...&Li, Jinmin.(2008).Structure and magnetic characteristics of nonpolar a-plane gan : mn films.Journal of physics d-applied physics,41(16),3.
MLA Sun, Lili,et al."Structure and magnetic characteristics of nonpolar a-plane gan : mn films".Journal of physics d-applied physics 41.16(2008):3.

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来源:半导体研究所

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