Dependence of current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes on quantum well widths
文献类型：期刊论文
| 作者 | Zhang Yang2; Zhang Yu1; Zeng Yi-Ping2 |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 17期号:12页码:4645-4647 |
| 关键词 | Resonant tunnelling diode Molecular beam epitaxy |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhang yu(rtdhemt@hotmail.com) |
| 英文摘要 | This paper studies the dependence of i - v characteristics on quantum well widths in alas/in0.53ga0.47as and alas/in0.53ga0.47as/inas resonant tunnelling structures grown on inp substrates. it shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. the measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width. |
| WOS关键词 | OSCILLATIONS ; GHZ |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000262494500052 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427413 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang Yu |
| 作者单位 | 1.Beijing Technol & Business Univ, Internship Ctr Business & Law, Beijing 102488, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Nolvel Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Yang,Zhang Yu,Zeng Yi-Ping. Dependence of current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes on quantum well widths[J]. Chinese physics b,2008,17(12):4645-4647. |
| APA | Zhang Yang,Zhang Yu,&Zeng Yi-Ping.(2008).Dependence of current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes on quantum well widths.Chinese physics b,17(12),4645-4647. |
| MLA | Zhang Yang,et al."Dependence of current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes on quantum well widths".Chinese physics b 17.12(2008):4645-4647. |
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来源：半导体研究所
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