Small sige quantum dots obtained by excimer laser annealing
文献类型：期刊论文
| 作者 | Han, Genquan1; Zeng, Yugang1; Liu, Yan1; Yu, Jinzhong1; Cheng, Buwen1; Yang, Haitao2 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2008-08-01 |
| 卷号 | 310期号:16页码:3746-3751 |
| 关键词 | Diffusion Atomic force microscopy Germanium silicon alloys |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2008.05.052 |
| 通讯作者 | Han, genquan(hgquan@red.semi.ac.cn) |
| 英文摘要 | In this paper, we obtain sige quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of si0.77ge0.23 strained films. under the excimer laser annealing, only surface atoms diffusion happens. from the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. the formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | GE ISLANDS ; STRAIN RELAXATION ; SUPERLATTICES ; EVOLUTION ; SILICON ; SI(100) ; SI(001) ; GROWTH |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000258801200011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427427 |
| 专题 | 半导体研究所 |
| 通讯作者 | Han, Genquan |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Tsinghua Univ, Dept Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, Genquan,Zeng, Yugang,Liu, Yan,et al. Small sige quantum dots obtained by excimer laser annealing[J]. Journal of crystal growth,2008,310(16):3746-3751. |
| APA | Han, Genquan,Zeng, Yugang,Liu, Yan,Yu, Jinzhong,Cheng, Buwen,&Yang, Haitao.(2008).Small sige quantum dots obtained by excimer laser annealing.Journal of crystal growth,310(16),3746-3751. |
| MLA | Han, Genquan,et al."Small sige quantum dots obtained by excimer laser annealing".Journal of crystal growth 310.16(2008):3746-3751. |
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来源：半导体研究所
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