Broadband emitting superluminescent diodes with inas quantum dots in algaas matrix
文献类型：期刊论文
| 作者 | Lv, X. Q.; Liu, N.; Jin, P.; Wang, Z. G. |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2008-09-01 |
| 卷号 | 20期号:17-20页码:1742-1744 |
| 关键词 | Algaas matrix Broadband emitting Quantum dots (qds) Superluminescent diodes (slds) |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2008.2004696 |
| 通讯作者 | Jin, p.(pengjin@red.semi.ac.cn) |
| 英文摘要 | Superluminescent diodes were fabricated by using inas-algaas self-assembled quantum dots (qds) as the active region. the ultrawide emitting spectrum of 142 nm was achieved. the short migration length of indium adatoms on algaas surface increases the size dispersion of inas qds, resulting in the broadening of optical gain spectrum. |
| WOS关键词 | OPTICAL COHERENCE TOMOGRAPHY ; EMISSION-SPECTRUM ; WELLS |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000260119600099 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427429 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jin, P. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lv, X. Q.,Liu, N.,Jin, P.,et al. Broadband emitting superluminescent diodes with inas quantum dots in algaas matrix[J]. Ieee photonics technology letters,2008,20(17-20):1742-1744. |
| APA | Lv, X. Q.,Liu, N.,Jin, P.,&Wang, Z. G..(2008).Broadband emitting superluminescent diodes with inas quantum dots in algaas matrix.Ieee photonics technology letters,20(17-20),1742-1744. |
| MLA | Lv, X. Q.,et al."Broadband emitting superluminescent diodes with inas quantum dots in algaas matrix".Ieee photonics technology letters 20.17-20(2008):1742-1744. |
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来源：半导体研究所
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