中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic states of inas/gaas tyre-shape quantum ring

文献类型:期刊论文

作者Wang Chuan-Dao; Yang Fu-Hua; Feng Song-Lin
刊名Chinese physics b
出版日期2008-08-01
卷号17期号:8页码:3054-3057
关键词Tyre-shape quantum ring (tsqr) Plan wave Energy level
ISSN号1674-1056
通讯作者Wang chuan-dao(cdwang@semi.ac.cn)
英文摘要In the framework of the effective mass theory, this paper calculates the electron energy levels of an inas/gaas tyre-shape quantum ring (tsqr) by using the plane wave basis. the results show that the electron energy levels are sensitively dependent on the tsqr's section thickness d, and insensitively dependent on tsqr's section inner radius r(1) and tsqr's inner radius r(2). the model and results provide useful information for the design and fabrication of inas/gaas tsqrs.
WOS关键词EFFECTIVE-MASS THEORY ; DOTS
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000258480200047
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427430
专题半导体研究所
通讯作者Wang Chuan-Dao
作者单位Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wang Chuan-Dao,Yang Fu-Hua,Feng Song-Lin. Electronic states of inas/gaas tyre-shape quantum ring[J]. Chinese physics b,2008,17(8):3054-3057.
APA Wang Chuan-Dao,Yang Fu-Hua,&Feng Song-Lin.(2008).Electronic states of inas/gaas tyre-shape quantum ring.Chinese physics b,17(8),3054-3057.
MLA Wang Chuan-Dao,et al."Electronic states of inas/gaas tyre-shape quantum ring".Chinese physics b 17.8(2008):3054-3057.

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来源:半导体研究所

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