Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd
文献类型：期刊论文
| 作者 | Zhou, Zhiwen1; Cai, Zhimeng1; Li, Cheng1; Lai, Hongkai1; Chen, Songyan1; Yu, Jinzhong2 |
| 刊名 | Applied surface science
 |
| 出版日期 | 2008-12-30 |
| 卷号 | 255期号:5页码:2660-2664 |
| 关键词 | Relaxed buffer Sige film Lt-ge layer Strain relaxation Uhvcvd |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2008.07.179 |
| 通讯作者 | Li, cheng(lich@xmu.edu.cn) |
| 英文摘要 | A flat, fully strain-relaxed si0.72ge0.28 thin film was grown on si (1 0 0) substrate with a combination of thin low-temperature (lt) ge and lt-si0.72ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. the strain relaxation ratio in the si0.72ge0.28 film was enhanced up to 99% with the assistance of three-dimensional ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top sige film. more interestingly, no cross-hatch pattern was observed on the sige surface and the surface root-mean-square roughness was less than 2 nm. the temperature for the growth of lt-ge layer was optimized to be 300 degrees c. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | THREADING DISLOCATION DENSITY ; THIN ; GROWTH ; HETEROSTRUCTURES ; BUFFERS |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000261299200020 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427433 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Cheng |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Zhiwen,Cai, Zhimeng,Li, Cheng,et al. Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd[J]. Applied surface science,2008,255(5):2660-2664. |
| APA | Zhou, Zhiwen,Cai, Zhimeng,Li, Cheng,Lai, Hongkai,Chen, Songyan,&Yu, Jinzhong.(2008).Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd.Applied surface science,255(5),2660-2664. |
| MLA | Zhou, Zhiwen,et al."Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd".Applied surface science 255.5(2008):2660-2664. |
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来源：半导体研究所
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