中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of different ammoniating time on tb-catalyzed gan nanorods

文献类型:期刊论文

作者Chen, Jinhua; Xiu, Xianwu; Qin, Lixia; Li, Hong; Yang, Zhaozhu; Wang, Ying
刊名Japanese journal of applied physics
出版日期2008-06-01
卷号47期号:6页码:4422-4425
关键词Gan Nanorods Ammoniating Magnetron sputtering Catalyst
ISSN号0021-4922
DOI10.1143/jjap.47.4422
通讯作者Chen, jinhua(xuechengshan@sdnu.edu.cn)
英文摘要A novel rare earth metal seed is employed as a catalyst for the growth of gan nanorods. large-scale gan nanorods have been successfully synthesized through ammoniating ga(2)o(3)/tb films sputtered on si(111) substrates, ammoniating time is changed to study its influence on gan nanorods. the samples are characterized with scanning electron microscopy, x-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum. the results demonstrate that the nanorods are single crystal hexagonal wurtzite gan, whose diameter increases gradually with the rise of ammoniating time. the nanorods possess good optical properties. the growth mechanism of gan nanorods is also discussed.
WOS关键词GALLIUM NITRIDE NANORODS ; SELF-CATALYST ; NANOWIRES ; GROWTH ; NANOTUBES ; FILMS
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000257260600009
出版者JAPAN SOC APPLIED PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427434
专题半导体研究所
通讯作者Chen, Jinhua
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Chen, Jinhua,Xiu, Xianwu,Qin, Lixia,et al. Influence of different ammoniating time on tb-catalyzed gan nanorods[J]. Japanese journal of applied physics,2008,47(6):4422-4425.
APA Chen, Jinhua,Xiu, Xianwu,Qin, Lixia,Li, Hong,Yang, Zhaozhu,&Wang, Ying.(2008).Influence of different ammoniating time on tb-catalyzed gan nanorods.Japanese journal of applied physics,47(6),4422-4425.
MLA Chen, Jinhua,et al."Influence of different ammoniating time on tb-catalyzed gan nanorods".Japanese journal of applied physics 47.6(2008):4422-4425.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。