Influence of different ammoniating time on tb-catalyzed gan nanorods
文献类型:期刊论文
作者 | Chen, Jinhua; Xiu, Xianwu; Qin, Lixia; Li, Hong; Yang, Zhaozhu; Wang, Ying |
刊名 | Japanese journal of applied physics
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出版日期 | 2008-06-01 |
卷号 | 47期号:6页码:4422-4425 |
关键词 | Gan Nanorods Ammoniating Magnetron sputtering Catalyst |
ISSN号 | 0021-4922 |
DOI | 10.1143/jjap.47.4422 |
通讯作者 | Chen, jinhua(xuechengshan@sdnu.edu.cn) |
英文摘要 | A novel rare earth metal seed is employed as a catalyst for the growth of gan nanorods. large-scale gan nanorods have been successfully synthesized through ammoniating ga(2)o(3)/tb films sputtered on si(111) substrates, ammoniating time is changed to study its influence on gan nanorods. the samples are characterized with scanning electron microscopy, x-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum. the results demonstrate that the nanorods are single crystal hexagonal wurtzite gan, whose diameter increases gradually with the rise of ammoniating time. the nanorods possess good optical properties. the growth mechanism of gan nanorods is also discussed. |
WOS关键词 | GALLIUM NITRIDE NANORODS ; SELF-CATALYST ; NANOWIRES ; GROWTH ; NANOTUBES ; FILMS |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000257260600009 |
出版者 | JAPAN SOC APPLIED PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427434 |
专题 | 半导体研究所 |
通讯作者 | Chen, Jinhua |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Jinhua,Xiu, Xianwu,Qin, Lixia,et al. Influence of different ammoniating time on tb-catalyzed gan nanorods[J]. Japanese journal of applied physics,2008,47(6):4422-4425. |
APA | Chen, Jinhua,Xiu, Xianwu,Qin, Lixia,Li, Hong,Yang, Zhaozhu,&Wang, Ying.(2008).Influence of different ammoniating time on tb-catalyzed gan nanorods.Japanese journal of applied physics,47(6),4422-4425. |
MLA | Chen, Jinhua,et al."Influence of different ammoniating time on tb-catalyzed gan nanorods".Japanese journal of applied physics 47.6(2008):4422-4425. |
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来源:半导体研究所
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