中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Elasticity, band structure, and piezoelectricity of bexzn1-xo alloys

文献类型:期刊论文

作者Duan, Yifeng1; Shi, Hongliang1; Qin, Lixia2
刊名Physics letters a
出版日期2008-04-14
卷号372期号:16页码:2930-2933
关键词First-principles Bowing coefficients Piezoelectricity Alloys Elasticity Semiconductor
ISSN号0375-9601
DOI10.1016/j.physleta.2008.01.011
通讯作者Duan, yifeng(yifeng@semi.ac.cn)
英文摘要Lattice constants, elasticity, band structure and piezoelectricity of hexagonal wideband gap bexzn1-xo ternary alloys are calculatedusing firstprinciples methods. the alloys' lattice constants obey vegard's law well. as be concentration increases, the bulk modulus and young's modulus of the alloys increase, whereas the piezoelectricity decreases. we predict that bexzn1-xo/gan/substrate (x = 0.022) multilayer structure can be suitable for high-frequency surface acoustic wave device applications. our calculated results are in good agreement with experimental data and other theoretical calculations. (c) 2008 elsevier b.v. all rights reserved.
WOS关键词FUNCTIONAL PERTURBATION-THEORY ; OPTICAL BOWINGS ; SAW PROPERTIES ; AB-INITIO ; ZNO ; PARAMETERS ; WURTZITE ; TENSORS ; OFFSETS ; PHASES
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000255313000031
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427442
专题半导体研究所
通讯作者Duan, Yifeng
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Shadong Normal Univ, Inst Semicond, Coll Phys & Elect, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Duan, Yifeng,Shi, Hongliang,Qin, Lixia. Elasticity, band structure, and piezoelectricity of bexzn1-xo alloys[J]. Physics letters a,2008,372(16):2930-2933.
APA Duan, Yifeng,Shi, Hongliang,&Qin, Lixia.(2008).Elasticity, band structure, and piezoelectricity of bexzn1-xo alloys.Physics letters a,372(16),2930-2933.
MLA Duan, Yifeng,et al."Elasticity, band structure, and piezoelectricity of bexzn1-xo alloys".Physics letters a 372.16(2008):2930-2933.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。