Dislocation scattering in alxga1-xn/gan heterostructures
文献类型：期刊论文
| 作者 | Xu, Xiaoqing; Liu, Xianglin; Han, Xiuxun; Yuan, Hairong; Wang, Jun; Guo, Yan; Song, Huaping; Zheng, Gaolin; Wei, Hongyuan; Yang, Shaoyan |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-11-03 |
| 卷号 | 93期号:18页码:3 |
| 关键词 | Aluminium compounds Dislocation density Electron mobility Gallium compounds Iii-v semiconductors Interface roughness Semiconductor heterojunctions Two-dimensional electron gas Wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3013836 |
| 通讯作者 | Xu, xiaoqing() |
| 英文摘要 | The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of alxga1-xn/gan heterostructures was calculated. based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. the estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. it was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature. |
| WOS关键词 | ELECTRON-MOBILITY ; GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000260778100037 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427445 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, Xiaoqing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Xiaoqing,Liu, Xianglin,Han, Xiuxun,et al. Dislocation scattering in alxga1-xn/gan heterostructures[J]. Applied physics letters,2008,93(18):3. |
| APA | Xu, Xiaoqing.,Liu, Xianglin.,Han, Xiuxun.,Yuan, Hairong.,Wang, Jun.,...&Wang, Zhanguo.(2008).Dislocation scattering in alxga1-xn/gan heterostructures.Applied physics letters,93(18),3. |
| MLA | Xu, Xiaoqing,et al."Dislocation scattering in alxga1-xn/gan heterostructures".Applied physics letters 93.18(2008):3. |
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来源：半导体研究所
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