High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz
文献类型：期刊论文
| 作者 | Wang, X. L.1; Chen, T. S.2; Xiao, H. L.1; Wang, C. M.1; Hu, G. X.1; Luo, W. J.1; Tang, J.1; Guo, L. C.1; Li, J. M.1 |
| 刊名 | Solid-state electronics
 |
| 出版日期 | 2008-06-01 |
| 卷号 | 52期号:6页码:926-929 |
| 关键词 | Algan/aln/gan Hemts Sic Power |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2007.12.014 |
| 通讯作者 | Luo, w. j.(luoweijun@mail.semi.ac.cn) |
| 英文摘要 | Optimized algan/aln/gan high electron mobility transistors (hemts) structures were grown on 2-in semi-insulating (si) 6h-sic substrate by metal-organic chemical vapor deposition (mocvd). the 2-in. hemt wafer exhibited a low average sheet resistance of 305.3 omega/sq with a uniformity of 3.85%. the fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum dc current density of 1360 ma/mm, a transconductance of 460 ms/mm, a breakdown voltage larger than 80 v, a current gain cut-off frequency of 24 ghz and a maximum oscillation frequency of 34 ghz. under the condition of continuous-wave (cw) at 9 ghz, the device achieved 18.1 w output power with a power density of 9.05 w/mm and power-added-efficiency (pae) of 36.4%. while the corresponding results of pulse condition at 8 ghz are 22.4 w output power with 11.2 w/mm power density and 45.3% pae. these are the state-of-the-art power performance ever reported for this physical dimension of gan hemts based on sic substrate at 8 ghz. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | ALGAN/GAN HEMTS ; MOBILITY ; MOCVD ; GROWTH ; PLATE ; LAYER |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000256845800015 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427448 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, W. J. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Nanjing Electron Devices Inst, Nanjing 210016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, X. L.,Chen, T. S.,Xiao, H. L.,et al. High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz[J]. Solid-state electronics,2008,52(6):926-929. |
| APA | Wang, X. L..,Chen, T. S..,Xiao, H. L..,Wang, C. M..,Hu, G. X..,...&Li, J. M..(2008).High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz.Solid-state electronics,52(6),926-929. |
| MLA | Wang, X. L.,et al."High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz".Solid-state electronics 52.6(2008):926-929. |
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来源：半导体研究所
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