中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods

文献类型:期刊论文

作者Yang, Zhaozhu; Xue, Chengshan; Zhuang, Huizhao; Wang, Gongtang; Chen, Jinhua; Li, Hong; Qin, Lixia; Zhang, Dongdong; Huang, Yinglong
刊名Solid state communications
出版日期2008-12-01
卷号148期号:9-10页码:480-483
关键词Gallium Nanorods Crystal growth Optical properties
ISSN号0038-1098
DOI10.1016/j.ssc.2008.04.017
通讯作者Xue, chengshan(xuechengshan@sdnu.edu.cn)
英文摘要Beta-ga2o3 nanostructured materials have been obtained on si(111) substrates by annealing the ga2o3/v films at different temperatures. x-ray diffraction (xrd), scanning electron microscope (sem), high-resolution transmission electron microscope (hrtem) and photoluminescence (pl) spectrum were used to analyze the structure, morphology and optical properties of beta-ga2o3 nanostructured films. these properties were investigated particularly as a function of annealing temperature. our results indicate that the beta-ga2o3 nanorods annealed at 950 degrees c have the best morphology and crystallinity. these nanorods are pure monoclinic ga2o3 structures with lengths of about 5 mu m and diameters of about 180 rim, which is conducive to the application of nanodevices. finally, the growth mechanism is also discussed briefly. (c) 2008 elsevier ltd. all rights reserved.
WOS关键词GALLIUM OXIDE ; GAS SENSORS ; NANOWIRES ; PHOTOLUMINESCENCE ; LUMINESCENCE ; GROWTH ; CARBON
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
WOS记录号WOS:000261406000031
出版者PERGAMON-ELSEVIER SCIENCE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427455
专题半导体研究所
通讯作者Xue, Chengshan
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Yang, Zhaozhu,Xue, Chengshan,Zhuang, Huizhao,et al. Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods[J]. Solid state communications,2008,148(9-10):480-483.
APA Yang, Zhaozhu.,Xue, Chengshan.,Zhuang, Huizhao.,Wang, Gongtang.,Chen, Jinhua.,...&Huang, Yinglong.(2008).Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods.Solid state communications,148(9-10),480-483.
MLA Yang, Zhaozhu,et al."Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods".Solid state communications 148.9-10(2008):480-483.

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来源:半导体研究所

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