Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods
文献类型：期刊论文
| 作者 | Yang, Zhaozhu; Xue, Chengshan; Zhuang, Huizhao; Wang, Gongtang; Chen, Jinhua; Li, Hong; Qin, Lixia; Zhang, Dongdong; Huang, Yinglong |
| 刊名 | Solid state communications
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 148期号:9-10页码:480-483 |
| 关键词 | Gallium Nanorods Crystal growth Optical properties |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2008.04.017 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Beta-ga2o3 nanostructured materials have been obtained on si(111) substrates by annealing the ga2o3/v films at different temperatures. x-ray diffraction (xrd), scanning electron microscope (sem), high-resolution transmission electron microscope (hrtem) and photoluminescence (pl) spectrum were used to analyze the structure, morphology and optical properties of beta-ga2o3 nanostructured films. these properties were investigated particularly as a function of annealing temperature. our results indicate that the beta-ga2o3 nanorods annealed at 950 degrees c have the best morphology and crystallinity. these nanorods are pure monoclinic ga2o3 structures with lengths of about 5 mu m and diameters of about 180 rim, which is conducive to the application of nanodevices. finally, the growth mechanism is also discussed briefly. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | GALLIUM OXIDE ; GAS SENSORS ; NANOWIRES ; PHOTOLUMINESCENCE ; LUMINESCENCE ; GROWTH ; CARBON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000261406000031 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427455 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Zhaozhu,Xue, Chengshan,Zhuang, Huizhao,et al. Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods[J]. Solid state communications,2008,148(9-10):480-483. |
| APA | Yang, Zhaozhu.,Xue, Chengshan.,Zhuang, Huizhao.,Wang, Gongtang.,Chen, Jinhua.,...&Huang, Yinglong.(2008).Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods.Solid state communications,148(9-10),480-483. |
| MLA | Yang, Zhaozhu,et al."Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods".Solid state communications 148.9-10(2008):480-483. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。