中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers

文献类型:期刊论文

作者Cao, Yulian; Yang, Tao; Ji, Haiming; Ma, Wenquan; Cao, Qing; Chen, Lianghui
刊名Ieee photonics technology letters
出版日期2008-11-01
卷号20期号:21-24页码:1860-1862
关键词Characteristics temperature P-doped Quantum-dot (qd) laser Saturation modal gain
ISSN号1041-1135
DOI10.1109/lpt.2008.2004778
通讯作者Cao, yulian()
英文摘要We have fabricated 1.3-mu m inas-gaas quantum-dot (qd) lasers with and without p-type modulation doping and their characteristics have been investigated. we find that introducing p-type doping in active regions can improve the temperature stability of 1.3-mu m inas-gaas qd lasers, but it does not, increase the saturation modal gain of the qd lasers. the saturation modal gain obtained from the two types of lasers is identical (17.5 cm(-1)). moreover, the characteristic temperature increases as cavity length increases for the two types of lasers, and it improves more significantly for the lasers with p-type doping due to their higher gain.
WOS关键词DENSITY-OF-STATES ; RECOMBINATION ; PERFORMANCE
WOS研究方向Engineering ; Optics ; Physics
WOS类目Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000261847800036
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427457
专题半导体研究所
通讯作者Cao, Yulian
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Cao, Yulian,Yang, Tao,Ji, Haiming,et al. Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers[J]. Ieee photonics technology letters,2008,20(21-24):1860-1862.
APA Cao, Yulian,Yang, Tao,Ji, Haiming,Ma, Wenquan,Cao, Qing,&Chen, Lianghui.(2008).Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers.Ieee photonics technology letters,20(21-24),1860-1862.
MLA Cao, Yulian,et al."Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers".Ieee photonics technology letters 20.21-24(2008):1860-1862.

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来源:半导体研究所

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