Enhanced electroluminescence intensity of ingan/gan multi-quantum-wells based on mg-doped gan annealed in o(2)
文献类型：期刊论文
| 作者 | Ma, Ping; Gai, Yanqin; Wang, Junxi; Yang, Fuhua; Zeng, Yiping; Li, Jinmin; Li, Jingbo |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-09-08 |
| 卷号 | 93期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2980032 |
| 通讯作者 | Ma, ping() |
| 英文摘要 | Ingan/gan multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 c in o(2)-ambient. based on our first-principle total-energy calculations, we conclude that besides dissociating the mg-h complex by forming h(2)o, annealing in o(2) has another positive effect on the activation of acceptor mg in gan. mg can be further activated by the formation of an impurity band above the valence band maximum of host gan from the passivated mg(ga)-o(n) complex. our calculated ionization energy for acceptor mg in the passivated system is about 30 mev shallower than that in pure gan, in good agreement with previous experimental measurement. our model can explain that the enhanced electroluminescence intensity of ingan/gan mqws based on mg-doped p-type gan is due to a decrease in the ionization energy of mg acceptor with the presence of oxygen. (c) 2008 american institute of physics. |
| WOS关键词 | P-TYPE GAN ; MOLECULAR-BEAM EPITAXY ; AUGMENTED-WAVE METHOD ; VAPOR-PHASE EPITAXY ; ELECTRICAL-PROPERTIES ; OXYGEN ; ACTIVATION ; SILICON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000259797000048 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427473 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ma, Ping |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Int Cooperat Base Solid State Lighting, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, Ping,Gai, Yanqin,Wang, Junxi,et al. Enhanced electroluminescence intensity of ingan/gan multi-quantum-wells based on mg-doped gan annealed in o(2)[J]. Applied physics letters,2008,93(10):3. |
| APA | Ma, Ping.,Gai, Yanqin.,Wang, Junxi.,Yang, Fuhua.,Zeng, Yiping.,...&Li, Jingbo.(2008).Enhanced electroluminescence intensity of ingan/gan multi-quantum-wells based on mg-doped gan annealed in o(2).Applied physics letters,93(10),3. |
| MLA | Ma, Ping,et al."Enhanced electroluminescence intensity of ingan/gan multi-quantum-wells based on mg-doped gan annealed in o(2)".Applied physics letters 93.10(2008):3. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。