Raman scattering characterization of mn composition and strain in ga1-xmnxsb/gasb epitaxial layers
文献类型：期刊论文
| 作者 | Islam, M. R.1; Chen, N. F.2; Yamada, M.1,3 |
| 刊名 | Crystal research and technology
 |
| 出版日期 | 2008-10-01 |
| 卷号 | 43期号:10页码:1091-1096 |
| 关键词 | Raman scattering Ga1-xmnxsb film Lpe Mn composition Strain |
| ISSN号 | 0232-1300 |
| DOI | 10.1002/crat.200800144 |
| 通讯作者 | Islam, m. r.(mri@eee.kuet.ac.bd) |
| 英文摘要 | Raman scattering (rs) experiments have been performed for simultaneous determination of mn composition and strain in ga1-xmnxsb thin films grown on gasb substrate by liquid phase epitaxy technique. the raman spectra obtained from various ga1-xmnxsb samples show only gasb-like phonon modes whose frequency positions are found to have mn compositional dependence. with the combination of epilayer strain model, rs and energy dispersive x-ray (edx) experiments, the compositional dependence of gasb-like lo phonon frequency is proposed both in strained and unstrained conditions. the proposed relationships are used to evaluate mn composition and strain from the ga1-xmnxsb samples. the results obtained from the rs data are found to be in good agreement with those determined independently by the edx analysis. furthermore, the frequency positions of mnsb-like phonon modes are suggested by reduced-mass model. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim |
| WOS关键词 | VIBRATIONAL-MODES ; CRYSTALS ; SPIN |
| WOS研究方向 | Crystallography |
| WOS类目 | Crystallography |
| 语种 | 英语 |
| WOS记录号 | WOS:000260041000017 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427475 |
| 专题 | 半导体研究所 |
| 通讯作者 | Islam, M. R. |
| 作者单位 | 1.Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 9203, Bangladesh 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan |
| 推荐引用方式 GB/T 7714 | Islam, M. R.,Chen, N. F.,Yamada, M.. Raman scattering characterization of mn composition and strain in ga1-xmnxsb/gasb epitaxial layers[J]. Crystal research and technology,2008,43(10):1091-1096. |
| APA | Islam, M. R.,Chen, N. F.,&Yamada, M..(2008).Raman scattering characterization of mn composition and strain in ga1-xmnxsb/gasb epitaxial layers.Crystal research and technology,43(10),1091-1096. |
| MLA | Islam, M. R.,et al."Raman scattering characterization of mn composition and strain in ga1-xmnxsb/gasb epitaxial layers".Crystal research and technology 43.10(2008):1091-1096. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。