A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm mosfets
文献类型：期刊论文
| 作者 | Jiang, Xiang-Wei1; Deng, Hui-Xiong; Luo, Jun-Wei2; Li, Shu-Shen1; Wang, Lin-Wang3 |
| 刊名 | Ieee transactions on electron devices
 |
| 出版日期 | 2008-07-01 |
| 卷号 | 55期号:7页码:1720-1726 |
| 关键词 | Dopant fluctuation Linear combination of bulk band (lcbb) Mosfet Quantum mechanical Threshold 3-d |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/ted.2008.925331 |
| 通讯作者 | Jiang, xiang-wei(xwjiang@semi.ac.cn) |
| 英文摘要 | A fully 3-d atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. the empirical pseudopotential is used to represent the single particle hamiltonian, and the linear combination of bulk band method is used to solve the million atom schrodinger equation. the gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. it is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. the increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. however, the decrease in threshold lowering is in contrast with the density gradient calculations. |
| WOS关键词 | FIELD-EFFECT-TRANSISTORS ; DISCRETE IMPURITIES ; SEMICONDUCTOR ; SIMULATION ; PHYSICS ; DEVICES ; NM |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000257330100018 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427476 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jiang, Xiang-Wei |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Natl Renewable Energy Lab, Golden, CO 80401 USA 3.Univ Calif Berkeley, Lawrence Berkeley Lab, Computat Res Div, Berkeley, CA 94720 USA |
| 推荐引用方式 GB/T 7714 | Jiang, Xiang-Wei,Deng, Hui-Xiong,Luo, Jun-Wei,et al. A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm mosfets[J]. Ieee transactions on electron devices,2008,55(7):1720-1726. |
| APA | Jiang, Xiang-Wei,Deng, Hui-Xiong,Luo, Jun-Wei,Li, Shu-Shen,&Wang, Lin-Wang.(2008).A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm mosfets.Ieee transactions on electron devices,55(7),1720-1726. |
| MLA | Jiang, Xiang-Wei,et al."A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm mosfets".Ieee transactions on electron devices 55.7(2008):1720-1726. |
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来源：半导体研究所
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