High al-content alingan epilayers with different thicknesses grown on gan/sapphire templates
文献类型：期刊论文
| 作者 | Shang, J. Z.1,2; Zhang, B. P.1,2; Wu, C. M.1,2; Cai, L. E.1,2; Zhang, J. Y.1,2,3; Yu, J. Z.1,2,3; Wang, Q. M.1,2,3 |
| 刊名 | Applied surface science
 |
| 出版日期 | 2008-12-30 |
| 卷号 | 255期号:5页码:3350-3353 |
| 关键词 | Xps Pl Afm Composition pulling effect Alingan Mocvd |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2008.09.046 |
| 通讯作者 | Zhang, b. p.(bzhang@xmu.edu.cn) |
| 英文摘要 | We studied the structural and optical properties of high al-content alingan epilayers with different thicknesses grown on gan/sapphire templates by metalorganic chemical vapor deposition (mocvd). direct evidences of the gradual evolution of the content of al, ga and in along the growth direction were obtained. when the film thickness was over a certain value, however, the alingan epilayer with constant element contents began to form. these results were also supported by the blue shift and splitting of the photoluminescence (pl) peak. for the thinnest epilayer, the surface was featured with outcrops of threading dislocations (tds) which suggested a spiral growth mode. with increase in thickness, step-flow growth mode and v-shaped pits were observed, and the steps terminated at the pits. (c) 2008 elsevier b. v. all rights reserved. |
| WOS关键词 | SAPPHIRE SUBSTRATE ; QUANTUM-WELLS ; GAN TEMPLATES ; FILMS ; STRAIN ; RELAXATION ; DEFECTS ; ALGAN |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000261299200135 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427483 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, B. P. |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 2.Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shang, J. Z.,Zhang, B. P.,Wu, C. M.,et al. High al-content alingan epilayers with different thicknesses grown on gan/sapphire templates[J]. Applied surface science,2008,255(5):3350-3353. |
| APA | Shang, J. Z..,Zhang, B. P..,Wu, C. M..,Cai, L. E..,Zhang, J. Y..,...&Wang, Q. M..(2008).High al-content alingan epilayers with different thicknesses grown on gan/sapphire templates.Applied surface science,255(5),3350-3353. |
| MLA | Shang, J. Z.,et al."High al-content alingan epilayers with different thicknesses grown on gan/sapphire templates".Applied surface science 255.5(2008):3350-3353. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。