The influence of schottky contact metals on the strain of algan barrier layers
文献类型：期刊论文
| 作者 | Lin, Zhaojun1; Zhao, Jianzhi1; Corrigan, Timothy D.1; Wang, Zhen1; You, Zhidong1; Wang, Zhanguo2; Lu, Wu3 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2008-02-15 |
| 卷号 | 103期号:4页码:4 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2841328 |
| 通讯作者 | Lin, zhaojun(linzj@sdu.edu.cn) |
| 英文摘要 | Ir and ni schottky contacts on strained al(0.25)ga(0.75)n/gan heterostructures, and the ni schottky contact with different areas on strained al(0.3)ga(0.7)n/gan heterostructures have been prepared. using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared schottky contacts, the polarization charge densities of the algan barrier layer for the schottky contacts were analyzed and calculated by self-consistently solving schrodinger's and poisson's equations. it is found that the polarization charge density of the algan barrier layer for the ir schottky contact on strained al(0.25)ga(0.75)n/gan heterostructures is different from that of the ni schottky contact, and the polarization charge densities of the algan barrier layer for ni schottky contacts with different areas on strained al(0.3)ga(0.7)n/gan heterostructures are different corresponding to different ni schottky contact areas. as a result, the conclusion can be made that schottky contact metals on strained algan/gan heterostructures have an influence on the strain of the algan barrier layer. (c) 2008 american institute of physics. |
| WOS关键词 | PIEZOELECTRIC POLARIZATION ; HETEROSTRUCTURES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000254191300069 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427485 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lin, Zhaojun |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA |
| 推荐引用方式 GB/T 7714 | Lin, Zhaojun,Zhao, Jianzhi,Corrigan, Timothy D.,et al. The influence of schottky contact metals on the strain of algan barrier layers[J]. Journal of applied physics,2008,103(4):4. |
| APA | Lin, Zhaojun.,Zhao, Jianzhi.,Corrigan, Timothy D..,Wang, Zhen.,You, Zhidong.,...&Lu, Wu.(2008).The influence of schottky contact metals on the strain of algan barrier layers.Journal of applied physics,103(4),4. |
| MLA | Lin, Zhaojun,et al."The influence of schottky contact metals on the strain of algan barrier layers".Journal of applied physics 103.4(2008):4. |
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来源：半导体研究所
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