Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons
文献类型：期刊论文
| 作者 | Hua Lei; Song Guo-Feng; Guo Bao-Shan; Wang Wei-Min; Zhang Yu |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2008-11-01 |
| 卷号 | 57期号:11页码:7210-7215 |
| 关键词 | Surface plasmon Doped semiconductor Enhanced transmission Doping tuned |
| ISSN号 | 1000-3290 |
| 通讯作者 | Hua lei() |
| 英文摘要 | Transmission of electromagnetic wave in a heavily doped n-type gaas film is studied theoretically. from the calculations, an extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies is found. this extraordinary transmission is attributed to the coupling of the surface-plasmon polariton modes and waveguide modes. by selecting a set of groove parameters, the transmission is optimized to a maximum. furthermore, the transmission can be tuned by dopant concentrations. as the dopant concentration increases, the peak position shifts to higher frequency but the peak value decreases. |
| WOS关键词 | OPTICAL-TRANSMISSION ; LIGHT ; HOLES ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000260946500082 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427496 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hua Lei |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hua Lei,Song Guo-Feng,Guo Bao-Shan,et al. Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons[J]. Acta physica sinica,2008,57(11):7210-7215. |
| APA | Hua Lei,Song Guo-Feng,Guo Bao-Shan,Wang Wei-Min,&Zhang Yu.(2008).Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons.Acta physica sinica,57(11),7210-7215. |
| MLA | Hua Lei,et al."Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons".Acta physica sinica 57.11(2008):7210-7215. |
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来源：半导体研究所
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