Annealing behaviors of long-wavelength inas/gaas quantum dots with different growth procedures by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Liang, S.; Zhu, H. L.; Ye, X. L.; Wang, W. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2009-04-01 |
| 卷号 | 311期号:8页码:2281-2284 |
| 关键词 | Photoluminescence Metalorganic vapor phase epitaxy Self-assembled quantum dots Indium arsenide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2009.02.034 |
| 通讯作者 | Liang, s.(liangsong@red.semi.ac.cn) |
| 英文摘要 | The effects of annealing on the optical properties of inas/gaas quantum dots (qds) grown under different conditions by metalorganic chemical vapor deposition (mocvd) are studied. a lower qd growth rate leads to an earlier and faster decrease of qd photoluminescence (pl) intensity with increasing annealing temperature. which is proposed to be related to the increased qd two-dimensional (2d)-three-dimensional (3d) transition critical layer thickness at low qd growth rate. high-quality gaas cap layers grown at high temperature and a low deposition rate are shown to decrease the blueshift of the qds' emission wavelength significantly during in-situ i h annealing experiments, which is important for the fabrication of long-wavelength inas/gaas qd lasers by mocvd technique. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | MU-M ; LAYER ; LUMINESCENCE ; PERFORMANCE ; LASER ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000266351600007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427498 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liang, S. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang, S.,Zhu, H. L.,Ye, X. L.,et al. Annealing behaviors of long-wavelength inas/gaas quantum dots with different growth procedures by metalorganic chemical vapor deposition[J]. Journal of crystal growth,2009,311(8):2281-2284. |
| APA | Liang, S.,Zhu, H. L.,Ye, X. L.,&Wang, W..(2009).Annealing behaviors of long-wavelength inas/gaas quantum dots with different growth procedures by metalorganic chemical vapor deposition.Journal of crystal growth,311(8),2281-2284. |
| MLA | Liang, S.,et al."Annealing behaviors of long-wavelength inas/gaas quantum dots with different growth procedures by metalorganic chemical vapor deposition".Journal of crystal growth 311.8(2009):2281-2284. |
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来源：半导体研究所
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