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Growth of nonpolar a-plane gan on nano-patterned r-plane sapphire substrates

文献类型:期刊论文

作者Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Junxi
刊名Applied surface science
出版日期2009
卷号255期号:6页码:3664-3668
关键词Gan Nonpolar Mocvd Nano-patterned
ISSN号0169-4332
DOI10.1016/j.apsusc.2008.10.018
通讯作者Gao, haiyong(hygao2005@yahoo.com)
英文摘要Sapphire substrates were nano-patterned by inductive coupled plasma etching process. nonpolar a-plane gan films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. the anisotropic characteristic and the crystalline quality of the a-plane gan films were studied through xrd rocking curves. the cross section and surface morphologies of the a-plane gan films were studied using sem and afm measurements, respectively. the crystal quality and surface flatness of the nonpolar a-plane gan were greatly improved through the usage of the nano-patterned r-plane sapphire substrates. (c) 2008 elsevier b.v. all rights reserved.
WOS关键词EPITAXIAL LATERAL OVERGROWTH ; LIGHT-EMITTING-DIODES ; OPTICAL-PROPERTIES ; QUANTUM-WELLS ; POLARIZATION ; FILMS ; TIME
WOS研究方向Chemistry ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000261972100034
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427508
专题半导体研究所
通讯作者Gao, Haiyong
作者单位Chinese Acad Sci, Inst Semicond, Semicond Lighting Res & Dev Ctr, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Gao, Haiyong,Yan, Fawang,Zhang, Yang,et al. Growth of nonpolar a-plane gan on nano-patterned r-plane sapphire substrates[J]. Applied surface science,2009,255(6):3664-3668.
APA Gao, Haiyong,Yan, Fawang,Zhang, Yang,Li, Jinmin,Zeng, Yiping,&Wang, Junxi.(2009).Growth of nonpolar a-plane gan on nano-patterned r-plane sapphire substrates.Applied surface science,255(6),3664-3668.
MLA Gao, Haiyong,et al."Growth of nonpolar a-plane gan on nano-patterned r-plane sapphire substrates".Applied surface science 255.6(2009):3664-3668.

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来源:半导体研究所

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