Improvement in crystal quality of zno film on si substrate by using a homo-buffer layer
文献类型：期刊论文
| 作者 | Zhao, Jie1,2; Hu, Lizhong2 |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2009-12-01 |
| 卷号 | 12期号:6页码:233-237 |
| 关键词 | Zno Pulsed laser deposition X-ray diffraction Photoluminescence Reflection high-energy electron diffraction |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2009.12.003 |
| 通讯作者 | Zhao, jie(jiezhao_sub@163.com) |
| 英文摘要 | Zno thin films without and with a homo-buffer layer have been prepared on si(1 1 1) substrates by pulsed laser deposition (plo) under various conditions. photoluminescence (pl) measurement indicates that the optical quality of zno thin film is dramatically improved by introducing oxygen into the growth chamber. the sample deposited at 60 pa possesses the best optical properties among the oxygen pressure range studied. x-ray diffraction (xrd) results show that the films directly deposited on si are of polycrystalline zno structures. a low-temperature (500 degrees c) deposited zno buffer layer was used to enhance the crystal quality of the zno film. compared to the film without the buffer layer, the film with the buffer layer exhibits aligned spotty reflection high-energy electron diffraction (rheed) pattern and stronger near-band-edge emission (nbe) with a smaller full-width at half-maximum (fwhm) of 98 mev. the structural properties of zno buffer layers grown at different temperatures were investigated by rheed patterns. it is suggested that the present characteristics of the zno epilayer may be raised further by elevating the growth temperature of buffer layer to 600 degrees c. (c) 2009 elsevier ltd. all rights reserved. |
| WOS关键词 | PULSED-LASER DEPOSITION ; THIN-FILMS ; PLD TECHNIQUE ; GROWTH ; SAPPHIRE ; TEMPERATURE |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000288520200005 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427524 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Jie,Hu, Lizhong. Improvement in crystal quality of zno film on si substrate by using a homo-buffer layer[J]. Materials science in semiconductor processing,2009,12(6):233-237. |
| APA | Zhao, Jie,&Hu, Lizhong.(2009).Improvement in crystal quality of zno film on si substrate by using a homo-buffer layer.Materials science in semiconductor processing,12(6),233-237. |
| MLA | Zhao, Jie,et al."Improvement in crystal quality of zno film on si substrate by using a homo-buffer layer".Materials science in semiconductor processing 12.6(2009):233-237. |
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来源：半导体研究所
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