中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds

文献类型:期刊论文

作者Nie, Chao1; Jiang, Ruo Lian1; Ji, Xiao Li1,2; Xie, Zi Li1; Liu, Bin1; Han, Ping1; Zhang, Rong1; Zheng, You Dou1
刊名Ieee journal of quantum electronics
出版日期2009-05-01
卷号45期号:5-6页码:575-578
关键词Algan Distributed bragg reflector (dbr) Resonant-cavity-enhanced (rce) Transfer-matrix-approach (tma) Ultraviolet (uv) photodetector (pd)
ISSN号0018-9197
DOI10.1109/jqe.2009.2013146
通讯作者Nie, chao(nchbbc@gmail.com)
英文摘要Algan-based resonant-cavity-enhanced (rce) p-i-n photodetectors (pds) for operating at the wavelength of 330 nm were designed and fabricated. a 20.5-pair aln/al(0.3)ga(0.7)n distributed bragg reflector (dbr) was used as the back mirror and a 3-pair aln/al(0.3)ga(0.7)n dbr as the front one. in the cavity is a p-gan/i-gan/n-al(0.3)ga(0.7)n structure. the optical absorption of the rce pd structure is at most 59.8% deduced from reflectance measurement. selectively enhanced by the cavity effect, a response peak of 0.128 a/w at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. the peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees.
WOS关键词RCE PHOTODETECTORS ; PHOTODIODES
WOS研究方向Engineering ; Optics ; Physics
WOS类目Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000266454300018
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427526
专题半导体研究所
通讯作者Nie, Chao
作者单位1.Nanjing Univ, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Nie, Chao,Jiang, Ruo Lian,Ji, Xiao Li,et al. Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds[J]. Ieee journal of quantum electronics,2009,45(5-6):575-578.
APA Nie, Chao.,Jiang, Ruo Lian.,Ji, Xiao Li.,Xie, Zi Li.,Liu, Bin.,...&Zheng, You Dou.(2009).Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds.Ieee journal of quantum electronics,45(5-6),575-578.
MLA Nie, Chao,et al."Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds".Ieee journal of quantum electronics 45.5-6(2009):575-578.

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来源:半导体研究所

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