Metamorphic ingaas quantum well laser diodes at 1.5 mu on gaas grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang Hai-Li1; Wu Dong-Hai1; Wu Bing-peng1; Ni Hqiao-Qiao1; Huang She-Song1; Xiong Yong-Hua1; Wang Peng-Fei1; Han Qin1; Niu Zhi-Chuan1; Tangring, I.2 |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:1页码:3 |
| ISSN号 | 0256-307X |
| 通讯作者 | Wang hai-li(hlwang_19841220@163.com) |
| 英文摘要 | We report a 1.5-mu m ingaas/gaas quantum well laser diode grown by molecular beam epitaxy on ingaas metamorphic buffers. at 150 k, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current density is 667 a/cm(2) under pulsed operation. the pulsed lasers can operate up to 286 k. |
| WOS关键词 | THRESHOLD CURRENT-DENSITY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000262866100040 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427527 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Hai-Li |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 10008, Peoples R China 2.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden |
| 推荐引用方式 GB/T 7714 | Wang Hai-Li,Wu Dong-Hai,Wu Bing-peng,et al. Metamorphic ingaas quantum well laser diodes at 1.5 mu on gaas grown by molecular beam epitaxy[J]. Chinese physics letters,2009,26(1):3. |
| APA | Wang Hai-Li.,Wu Dong-Hai.,Wu Bing-peng.,Ni Hqiao-Qiao.,Huang She-Song.,...&Wang, S. M..(2009).Metamorphic ingaas quantum well laser diodes at 1.5 mu on gaas grown by molecular beam epitaxy.Chinese physics letters,26(1),3. |
| MLA | Wang Hai-Li,et al."Metamorphic ingaas quantum well laser diodes at 1.5 mu on gaas grown by molecular beam epitaxy".Chinese physics letters 26.1(2009):3. |
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来源：半导体研究所
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