Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition
文献类型：期刊论文
| 作者 | Fan, Y. M.; Zhang, X. W.; You, J. B.; Tan, H. R.; Chen, N. F. |
| 刊名 | Surface & coatings technology
 |
| 出版日期 | 2009-02-25 |
| 卷号 | 203期号:10-11页码:1452-1456 |
| 关键词 | Cubic boron nitride Stress relaxation Ion beam assisted deposition Fourier transformed infrared spectroscopy |
| ISSN号 | 0257-8972 |
| DOI | 10.1016/j.surfcoat.2008.11.021 |
| 通讯作者 | Zhang, x. w.(xwzhang@semi.ac.cn) |
| 英文摘要 | Cubic boron nitride (c-bn) films were prepared by ion beam assisted deposition (ibad) technique, and the stresses were primary estimated by measuring the frequency shifts in the infrared-absorption peaks of c-bn samples. to test the possible effects of other factors, dependencies of the c-bn transversal optical mode position on film thickness and c-bn content were investigated. several methods for reducing the stress of c-bn films including annealing, high temperature deposition, two-stage process, and the addition of a small amount of si were studied, in which the c-bn films with similar thickness and cubic phase content were used to evaluate the effects of the various stress relief methods. it was shown that all the methods can reduce the stress in c-bn films to various extents. especially, the incorporation of a small amount of si (2.3 at.%) can result in a remarkable stress relief from 8.4 to similar to 3.6 gpa whereas the c-bn content is nearly unaffected, although a slight degradation of the c-bn crystallinity is observed. the stress can be further reduced down below i gpa by combination of the addition of si with the two-stage deposition process. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | C-BN FILMS ; CHEMICAL-VAPOR-DEPOSITION ; INFRARED-ABSORPTION PEAKS ; STRAIN-INDUCED SHIFTS ; THIN-FILMS ; PHYSICAL-PROPERTIES ; GROWTH ; RELAXATION ; MECHANISMS ; NUCLEATION |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Coatings & Films ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000263618600024 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427532 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fan, Y. M.,Zhang, X. W.,You, J. B.,et al. Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition[J]. Surface & coatings technology,2009,203(10-11):1452-1456. |
| APA | Fan, Y. M.,Zhang, X. W.,You, J. B.,Tan, H. R.,&Chen, N. F..(2009).Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition.Surface & coatings technology,203(10-11),1452-1456. |
| MLA | Fan, Y. M.,et al."Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition".Surface & coatings technology 203.10-11(2009):1452-1456. |
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来源：半导体研究所
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