Structure and characterization of mg-doped gan nanowires
文献类型：期刊论文
| 作者 | Xue Cheng-Shan; Zhang Dong-Dong; Zhuang Hui-Zhao; Huang Ying-Long; Wang Zou-Ping; Wang Ying |
| 刊名 | Acta physico-chimica sinica
 |
| 出版日期 | 2009 |
| 卷号 | 25期号:1页码:113-115 |
| 关键词 | Gan Nanowires Single crystal Mg-doped |
| ISSN号 | 1000-6818 |
| DOI | 10.3866/pku.whxb20090120 |
| 通讯作者 | Xue cheng-shan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Large-scale mg-doped gan nanowires were synthesized by ammoniating mg:ga2o3 thin films at 850 degrees c which were deposited on the si substrate using the resembling delta doping method. these gan nanowires were characterized by scanning electron microscopy (sem), x-ray diffraction (xrd), fourier transformed infrared (ftir) spectroscopy and high resolution transmission electron microscopy (hrtem). the results indicated that nanowires were hexagonal wurzite gan single crystals. the diameter of nanowires was in the range of 35-50 nm with lengths of up to several tens of micrometers. |
| WOS关键词 | GALLIUM NITRIDE ; INFRARED-ABSORPTION ; FILMS ; CARBON |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Physical |
| 语种 | 英语 |
| WOS记录号 | WOS:000262685100020 |
| 出版者 | PEKING UNIV PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427536 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue Cheng-Shan |
| 作者单位 | Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue Cheng-Shan,Zhang Dong-Dong,Zhuang Hui-Zhao,et al. Structure and characterization of mg-doped gan nanowires[J]. Acta physico-chimica sinica,2009,25(1):113-115. |
| APA | Xue Cheng-Shan,Zhang Dong-Dong,Zhuang Hui-Zhao,Huang Ying-Long,Wang Zou-Ping,&Wang Ying.(2009).Structure and characterization of mg-doped gan nanowires.Acta physico-chimica sinica,25(1),113-115. |
| MLA | Xue Cheng-Shan,et al."Structure and characterization of mg-doped gan nanowires".Acta physico-chimica sinica 25.1(2009):113-115. |
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来源：半导体研究所
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