中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermal effects investigation and cavity design in passively mode-locked nd:yvo4 laser with a sesam

文献类型:期刊论文

作者Li, Tao1; Zhao, Shengzhi1; Zhuo, Zhuang1; Wang, Yonggang2
刊名Optics communications
出版日期2009-03-01
卷号282期号:5页码:940-943
关键词Nd:yvo4 crystal Sesam Mode-locking Thermal effects
ISSN号0030-4018
DOI10.1016/j.optcom.2008.11.008
通讯作者Zhao, shengzhi(shengzhi_zhao@sdu.edu.cn)
英文摘要A diode-pumped passively mode-locked nd:yvo4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (sesam). the temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on sesam under its damage threshold. both the q-switched and continuous-wave mode-locked operation are experimentally realized. the maximum average output power of 8.94 w with a 9.3 ps pulse width at a repetition rate of 111 mhz is obtained under a pump power of 24 w, correspondingly the optical slope efficiency is 39.2%. (c) 2008 elsevier b.v. all rights reserved.
WOS关键词ND-YVO4 LASER ; POWER ; LOCKING ; YAG
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000263404400042
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427540
专题半导体研究所
通讯作者Zhao, Shengzhi
作者单位1.Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Li, Tao,Zhao, Shengzhi,Zhuo, Zhuang,et al. Thermal effects investigation and cavity design in passively mode-locked nd:yvo4 laser with a sesam[J]. Optics communications,2009,282(5):940-943.
APA Li, Tao,Zhao, Shengzhi,Zhuo, Zhuang,&Wang, Yonggang.(2009).Thermal effects investigation and cavity design in passively mode-locked nd:yvo4 laser with a sesam.Optics communications,282(5),940-943.
MLA Li, Tao,et al."Thermal effects investigation and cavity design in passively mode-locked nd:yvo4 laser with a sesam".Optics communications 282.5(2009):940-943.

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来源:半导体研究所

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