A study on a two-step technique of growing ga2o3/zno films ammoniated at different temperatures
文献类型：期刊论文
| 作者 | Xue, Shoubin1; Zhang, Xing1; Huang, Ru1; Zhuang, Huizhao2 |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2009 |
| 卷号 | 41期号:3页码:460-464 |
| 关键词 | Nanostructures Gallium nitride Semiconductors Nanofabrications |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2008.09.005 |
| 通讯作者 | Xue, shoubin(xueshoubin-pku@163.com) |
| 英文摘要 | Zno films are firstly prepared on si substrates by pulsed laser deposition (pld) technique and then the ga2o3 films are deposited on zno/si substrates by magnetron sputtering system. the low-dimensional gan nanostructured materials are obtained by ammoniating the ga2o3/zno films from 850 to 1000 degrees c for 15 min in a quartz tube. x-ray diffraction (xrd), scanning electron microscope (sem), field-emission transmission electron microscope (fetem), fourier transform infrared spectrophotometer (ftir) and photoluminescence (pl) are used to analyze the structure, morphology and optical properties of as-grown samples. the results show that their properties are investigated particularly as a function of ammoniating temperatures. large quantities of high-quality gan nanowires are successfully fabricated at 900 degrees c with lengths of about tens of micrometers and diameters ranging from 30 to 120nm, which could supply an attractive potential to harmonically incorporate future gan optoelectronic devices into si-based large-scale integrated circuits. finally, the growth mechanism is also briefly discussed. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; GAN NANOWIRES ; GALLIUM NITRIDE ; STRUCTURAL-PROPERTIES ; EXCESS CARBON ; ZNO FILMS ; SIC FILMS ; NANORODS ; GROWTH ; ABSORPTION |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000263015700025 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427543 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Shoubin |
| 作者单位 | 1.Peking Univ, Inst Microelect, SOI Grp, Beijing 100871, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Shandong 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Shoubin,Zhang, Xing,Huang, Ru,et al. A study on a two-step technique of growing ga2o3/zno films ammoniated at different temperatures[J]. Physica e-low-dimensional systems & nanostructures,2009,41(3):460-464. |
| APA | Xue, Shoubin,Zhang, Xing,Huang, Ru,&Zhuang, Huizhao.(2009).A study on a two-step technique of growing ga2o3/zno films ammoniated at different temperatures.Physica e-low-dimensional systems & nanostructures,41(3),460-464. |
| MLA | Xue, Shoubin,et al."A study on a two-step technique of growing ga2o3/zno films ammoniated at different temperatures".Physica e-low-dimensional systems & nanostructures 41.3(2009):460-464. |
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来源：半导体研究所
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