Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate
文献类型：期刊论文
| 作者 | Chen, Yanghua1; Li, Cheng1; Zhou, Zhiwen1; Lai, Hongkai1; Chen, Songyan1; Ding, Wuchang2; Cheng, Buwen2; Yu, Yude2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-04-06 |
| 卷号 | 94期号:14页码:3 |
| 关键词 | Chemical vapour deposition Elemental semiconductors Energy gap Germanium Ge-si alloys Photoluminescence Semiconductor epitaxial layers Semiconductor quantum wells Silicon Tensile strength |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3114408 |
| 通讯作者 | Li, cheng(lich@xmu.edu.cn) |
| 英文摘要 | We report a room temperature study of the direct band gap photoluminescence of tensile-strained ge/si0.13ge0.87 multiple quantum wells grown on si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. blueshifts of the luminescence peak energy from the ge quantum wells in comparison with the ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c gamma 1-hh1 direct band transition. the reduction in direct band gap in the tensile strained ge epilayer and the quantum confinement effect in the ge/si0.13ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000265083700015 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427549 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Cheng |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Yanghua,Li, Cheng,Zhou, Zhiwen,et al. Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate[J]. Applied physics letters,2009,94(14):3. |
| APA | Chen, Yanghua.,Li, Cheng.,Zhou, Zhiwen.,Lai, Hongkai.,Chen, Songyan.,...&Yu, Yude.(2009).Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate.Applied physics letters,94(14),3. |
| MLA | Chen, Yanghua,et al."Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate".Applied physics letters 94.14(2009):3. |
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来源：半导体研究所
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