Growth behavior of alingan films
文献类型：期刊论文
| 作者 | Shang, J. Z.1,2; Zhang, B. P.1,2; Mao, M. H.1,2; Cai, L. E.1,2; Zhang, J. Y.1,2,3; Fang, Z. L.1,2; Liu, B. L.1,2; Yu, J. Z.1,2,3; Wang, Q. M.1,2,3; Kusakabe, K.4 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2009-01-15 |
| 卷号 | 311期号:3页码:474-477 |
| ISSN号 | 0022-0248 |
| 关键词 | Scanning electron microscope Strain X-ray diffraction Alingan |
| DOI | 10.1016/j.jcrysgro.2008.09.012 |
| 通讯作者 | Zhang, b. p.(bzhang@xmu.edu.cn) |
| 英文摘要 | The structural and surface properties of alingan quaternary films grown at different temperatures on gan templates by metalorganic chemical vapor deposition are investigated. formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. the surface is featured with v-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of alingan layers. the two-layer structure is interpreted by taking into account of the strain status in alingan layers. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; QUANTUM-WELLS ; EPILAYERS ; LUMINESCENCE ; TEMPERATURE ; DIODES ; LASER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000264161700012 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427552 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, B. P. |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 2.Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 4.Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan |
| 推荐引用方式 GB/T 7714 | Shang, J. Z.,Zhang, B. P.,Mao, M. H.,et al. Growth behavior of alingan films[J]. Journal of crystal growth,2009,311(3):474-477. |
| APA | Shang, J. Z..,Zhang, B. P..,Mao, M. H..,Cai, L. E..,Zhang, J. Y..,...&Ohkawa, K..(2009).Growth behavior of alingan films.Journal of crystal growth,311(3),474-477. |
| MLA | Shang, J. Z.,et al."Growth behavior of alingan films".Journal of crystal growth 311.3(2009):474-477. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。