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Effect of ka-band microwave on the spin dynamics of electrons in a gaas/al0.35ga0.65as heterostructure

文献类型:期刊论文

作者Luo, Haihui1; Qian, Xuan1; Gu, Xiaofang1; Ji, Yang1; Umansky, Vladimir2
刊名Applied physics letters
出版日期2009-05-11
卷号94期号:19页码:3
关键词Aluminium compounds Carrier lifetime Gallium arsenide High-frequency effects Iii-v semiconductors Optical kerr effect Semiconductor heterojunctions Spin dynamics Two-dimensional electron gas
ISSN号0003-6951
DOI10.1063/1.3138154
通讯作者Ji, yang(jiyang@red.semi.ac.cn)
英文摘要We report experimental results of the effect of ka-band microwave on the spin dynamics of electrons in a two-dimensional electron system (2des) in a gaas/al0.35ga0.65as heterostructure via time-resolved kerr rotation measurements. while the microwave reduces the transverse spin lifetime of electrons in the bulk gaas, it significantly increases that in the 2des, from 745 to 1213 ps, when its frequency is close to the zeeman splitting of the electrons in the magnetic field. such a microwave-enhanced spin lifetime is ascribed to the microwave-induced electron scattering which leads to a "motional narrowing" of spins via d'yakonov-perel' mechanism.
WOS关键词QUANTUM-WELLS ; SPINTRONICS ; RELAXATION
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000266263400034
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427554
专题半导体研究所
通讯作者Ji, Yang
作者单位1.Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
2.Weizmann Inst Sci, Braun Ctr Submicron Res, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
推荐引用方式
GB/T 7714
Luo, Haihui,Qian, Xuan,Gu, Xiaofang,et al. Effect of ka-band microwave on the spin dynamics of electrons in a gaas/al0.35ga0.65as heterostructure[J]. Applied physics letters,2009,94(19):3.
APA Luo, Haihui,Qian, Xuan,Gu, Xiaofang,Ji, Yang,&Umansky, Vladimir.(2009).Effect of ka-band microwave on the spin dynamics of electrons in a gaas/al0.35ga0.65as heterostructure.Applied physics letters,94(19),3.
MLA Luo, Haihui,et al."Effect of ka-band microwave on the spin dynamics of electrons in a gaas/al0.35ga0.65as heterostructure".Applied physics letters 94.19(2009):3.

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来源:半导体研究所

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