High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels
文献类型：期刊论文
| 作者 | Xu, D. W.1; Yoon, S. F.1; Tong, C. Z.1; Zhao, L. J.2; Ding, Y.1; Fan, W. J.1 |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2009-09-01 |
| 卷号 | 21期号:17页码:1211-1213 |
| 关键词 | Quantum dot (qd) Single-mode Thermal stability Threshold current Vertical-cavity surface-emitting lasers (vcsels) |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2009.2024220 |
| 通讯作者 | Xu, d. w.(n060085@ntu.edu.sg) |
| 英文摘要 | In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m inas-gaas quantum-dot (qd) vertical-cavity surface-emitting lasers (vcsels) with p-type modulation-doped qd active region from 20 degrees c to 60 degrees c. the highest output power of 0.435mw and lowest threshold current of 1.2 ma under single-mode operation are achieved. the temperature-dependent output characteristics of qd-vcsels are investigated. single-mode operation with a sidemode suppression ratio of 34 db is observed at room temperature. the critical size of oxide aperture for single-mode operation is discussed. |
| WOS关键词 | DEPENDENT OUTPUT CHARACTERISTICS ; SURFACE-EMITTING LASER |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000269213700017 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427555 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, D. W. |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, D. W.,Yoon, S. F.,Tong, C. Z.,et al. High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels[J]. Ieee photonics technology letters,2009,21(17):1211-1213. |
| APA | Xu, D. W.,Yoon, S. F.,Tong, C. Z.,Zhao, L. J.,Ding, Y.,&Fan, W. J..(2009).High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels.Ieee photonics technology letters,21(17),1211-1213. |
| MLA | Xu, D. W.,et al."High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels".Ieee photonics technology letters 21.17(2009):1211-1213. |
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来源：半导体研究所
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